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| Part Number | D2012 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | D2012 |
| Manufacturer | STMicroelectronics |
| Title | NPN Silicon Power Transistor |
| Description | The 2SD2012 is a silicon NPN power transistor housed in TO-220F insulated package. It is inteded for power linear and switching applications. 3 2 1 TO-220F INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Visol Tstg Tj Parameter Collector-Base Voltage (IE. |
| Features | CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions ICBO Collector Cut-off Current (IE = 0) IEBO Emitter Cut-off Current (IC = 0) V(BR)CEO∗ Collector-Emitter Breakdown Voltage (IB = 0) VCE(sat)∗ Collector-Emitter Saturation Voltage VCB = 60 V VEB = 7 V IC = 50 mA IC = 2 A IB = 0.2 A VBE∗ Base-Emitter Voltage IC = 0.5 A VCE = 5 V hFE∗ DC Curren. |
| Part Number | D2012 |
| Manufacturer | Wuxi Youda Electronics |
| Title | Si NPN Transistor |
| Description | AND FEATURES *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity D2012 D2012 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-B. |
| Features | *Collector-Emitter voltage: BVCBO= 60V *Collector current up to 3A *High hFE linearity D2012 D2012 PIN CONFIGURATIONS PIN 1 2 3 SYMBOL Emitter Collector Base ABSOLUTE MAXIMUM RATINGS (Tamb=25¡æ ) PARAMETER SYMBOL Collector-Base Voltage BVCBO Collector-Emitter Voltage BVCEO Emitter-Base Voltage BVEBO Tcase=25¡æ Collector Dissipation PCM Tamb=25¡æ DC ICM Collector Current Pulse Icp Base Current . |
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Desde 2024. D4U Semiconductor.
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