CEM4431 |
Part Number | CEM4431 |
Manufacturer | Chino-Excel Technology |
Description | CEM4431 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -5.8A, RDS(ON) = 40mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = . |
Features | -30V, -5.8A, RDS(ON) = 40mΩ @VGS = -10V. RDS(ON) = 70mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -30 VGS ±20 ID -5.8 IDM -30 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Th. |
Datasheet |
CEM4431 Data Sheet
PDF 60.21KB |
Distributor | Stock | Price | Buy |
---|
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | CEM4432 |
Chino-Excel Technology |
Dual P-Channel MOSFET | |
2 | CEM4435 |
Chino-Excel Technology |
P-Channel Enhancement Mode Field Effect Transistor | |
3 | CEM4435A |
CET |
P-Channel Enhancement Mode Field Effect Transistor | |
4 | CEM4401 |
CET |
P-Channel MOSFET | |
5 | CEM4410 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
6 | CEM4410A |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
7 | CEM4410B |
Chino-Excel Technology |
N-Channel MOSFET | |
8 | CEM4412-XA |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
9 | CEM4412S1 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
10 | CEM4416 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |