CEM4416 |
Part Number | CEM4416 |
Manufacturer | Chino-Excel Technology |
Description | CEM4416 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 9A, RDS(ON) = 18mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C u. |
Features | 30V, 9A, RDS(ON) = 18mΩ @VGS = 10V. RDS(ON) = 28mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. DD D D 8 7 65 SO-8 1 1 234 S SSG ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS 30 VGS ±20 ID 9 IDM 50 Maximum Power Dissipation PD 2.5 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resis. |
Datasheet |
CEM4416 Data Sheet
PDF 59.16KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
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1 | CEM4410 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
2 | CEM4410A |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor | |
3 | CEM4410B |
Chino-Excel Technology |
N-Channel MOSFET | |
4 | CEM4412-XA |
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N-Channel Enhancement Mode Field Effect Transistor | |
5 | CEM4412S1 |
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6 | CEM4401 |
CET |
P-Channel MOSFET | |
7 | CEM4426 |
VBsemi |
N-Channel MOSFET | |
8 | CEM4431 |
Chino-Excel Technology |
P-Channel Enhancement Mode Field Effect Transistor | |
9 | CEM4432 |
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Dual P-Channel MOSFET | |
10 | CEM4435 |
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P-Channel Enhancement Mode Field Effect Transistor |