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CEB16N10L |
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| Part Number | CEB16N10L |
| Manufacturer | CET |
| Description | CEP16N10L/CEB16N10L N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S. |
| Features | 100V, 15.2A, RDS(ON) = 115mΩ @VGS = 10V. RDS(ON) = 125mΩ @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package. D D G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - Derate above 25 C VDS VGS ID IDM PD 100 ±20 15.2 60 60 0.48 Operating and Store Temperature . |
| Datasheet |
 CEB16N10L Data Sheet
PDF 365.84KB |
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CEB16N10L |
| Part Number | CEB16N10L |
| Manufacturer | VBsemi |
| Title | N-Channel MOSFET |
| Description | CEB16N10L-VB CEB16N10L-VB Datasheet N-Channel 100-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY V(BR)DSS (V) RDS(on) (Ω) 100 0.100 at VGS = 10 V D2PAK (TO-263) G D S ID (A) 20 D FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Test. |
| Features |
• TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 % Rg Tested APPLICATIONS • Isolated DC/DC Converters G S N-Channel MOSFET RoHS COMPLIANT ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 175 °C) TC = 25 °C TC = 125 °C ID Pulsed Drain. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | CEB16N10 |
CET |
N-Channel MOSFET |
|
| 2 | CEB1012 |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor |
|
| 3 | CEB1012L |
Chino-Excel Technology |
N-Channel Enhancement Mode Field Transistor |
|
| 4 | CEB10N4 |
CET |
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| 5 | CEB10N6 |
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| 6 | CEB110P03 |
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P-Channel MOSFET |
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| 7 | CEB1165 |
CET |
N-Channel MOSFET |
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| 8 | CEB1175 |
CET |
N-Channel MOSFET |
|
| 9 | CEB1185 |
CET |
N-Channel MOSFET |
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| 10 | CEB1186 |
CET |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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