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CEB10N6 |
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| Part Number | CEB10N6 |
| Manufacturer | CET |
| Description | CEP10N6/CEB10N6 CEF10N6 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type CEP10N6 CEB10N6 CEF10N6 VDSS 600V 600V 600V RDS(ON) 0.75Ω 0.75Ω 0.75Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(. |
| Features | Type CEP10N6 CEB10N6 CEF10N6 VDSS 600V 600V 600V RDS(ON) 0.75Ω 0.75Ω 0.75Ω ID 10A 10A 10A d @VGS 10V 10V 10V Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D DG G S CEB SERIES TO-263(DD-PAK) G D S CEP SERIES TO-220 G D S CEF SERIES TO-220F S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Parameter Symbol Limit TO-220/263 TO-220F Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TC = 25 C @ TC = 100 C Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C - De. |
| Datasheet |
 CEB10N6 Data Sheet
PDF 379.32KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | CEB10N4 |
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| 2 | CEB1012 |
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Desde 2024. D4U Semiconductor.
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