Part Number | C3807 |
Manufacturer | Sanyo Semicon Device |
Title | Switching Controllers Programmable Maximum Duty Cycle |
Description | www.DataSheet.co.kr Ordering number:EN2018A NPN Epitaxial Planar Silicon Transistor 2SC3807 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers. Package Dimensions unit:mm 2043A [2SC3807] Features · Large current capaci... |
Features |
· Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚C B : Base C : Collector E : Emitter SANYO : TO-126LP Conditions Ratings 30 25 15 2 4 1.2 15 150 –55 to +150 Unit V V... |
Document |
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Stock | 889 In Stock |
Price | 1 units: 4.65 USD 10 units: 4.17 USD 75 units: 3.49 USD 300 units: 3.24 USD 1050 units: 2.81 USD
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Part Number | C3808 |
Manufacturer | Sanyo |
Title | NPN Epitaxial Planar Silicon Transistor |
Description | Ordering number:EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applicati. |
Features |
· Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter. |
Document | C3808 datasheet pdf |
Part Number | C3805 |
Manufacturer | Toshiba |
Title | Silicon NPN Transistor |
Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3805 TV Horizontal Deflection Output Applications TV Chroma Output Applications 2S. |
Features |
hFE (1) hFE (2) VCE (sat) VBE (sat)
fT Cob
Test Condition
VCB = 240 V, IE = 0 VEB = 7 V, IC = 0 VCE = 10 V, IC = 0.5 mA VCE = 10 V, IC = 20 mA IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA VCE = 10 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz
Marking
2SC3805
Min Typ. Max Unit ― ― 1.0 µA ― ― 1.0 mA 2. |
Document | C3805 datasheet pdf |
Part Number | C3803 |
Manufacturer | Toshiba |
Title | Silicon NPN Transistor |
Description | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC3803 High Frequency Amplifier Applications Video Amplifier Applications High Speed . |
Features |
s product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Preca. |
Document | C3803 datasheet pdf |
Part Number | C3802K |
Manufacturer | Rohm |
Title | NPN Silicon Transistor |
Description | www.DataSheet4U.com This Material Copyrighted By Its Respective Manufacturer www.DataSheet4U.com This Material Copyrighted By Its Respective Ma. |
Features |
. |
Document | C3802K datasheet pdf |
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