| Description | Ordering number:EN2105A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers. Features · Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hF... |
| Features |
· Large current capacity (IC=2A). · Adoption of MBIT process. · High DC current gain (hFE=800 to 3200). · Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). · High VEBO (VEBO≥15V). Package Dimensions unit:mm 2043A [2SC3808] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Co... |
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Powerex |
Phase Control SCR |
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Rohm |
NPN Silicon Transistor |
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Toshiba |
Silicon NPN Transistor |
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Toshiba |
Silicon NPN Transistor |
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Sanyo Semicon Device |
NPN Epitaxial Planar Silicon Transistor |
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Panasonic |
Silicon NPN Transistor |
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Sanyo |
NPN Epitaxial Planar Type Silicon Transistor |
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Panasonic |
Silicon PNP Transistor |
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ETC |
Silicon NPN Planar Transistor |
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Panasonic |
Silicon NPN Transistor |
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