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| Part Number | BUX48 |
| Distributor | Stock | Price | Buy |
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| Part Number | BUX48 |
| Manufacturer | Comset Semiconductors |
| Title | VERY HIGH VOLTAGE POWER TRANSISTOR |
| Description | NPN BUX48 – BUX48A HIGH VOLTAGE FAST-SWITCHING POWER TRANSISTOR They are silicon multiepitaxial mesa NPN transistor in Jedec TO-3 case. They are intended for use in switching and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO VCES VCER VCBO VEBO IC ICM IB IBM Pt TJ T. |
| Features | BUX48A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol VCEO(SUS) VEBO Ratings Collector-Emitter Sustaining Voltage (*) Emitter-Base Voltage Test Condition(s) IC= 100 mA IC= 0 IE= 50 mA VCE= 400 V IB= 0 RBE= 10Ω VCE= 450 V IB= 0 RBE= 10Ω VCE= 850 V VBE= 0 VCE= 1000 V VBE= 0 @ 25°C BUX48 @ 125°C @ 25°C @ 125°C @ 25°C @ 125°C @ 25°C @ 125°C BUX48A BUX48 BUX48A BUX48 BUX48A BUX48 B. |
| Part Number | BUX48 |
| Manufacturer | NTE |
| Title | Silicon NPN Transistor |
| Description | The BUX48 and BUX48A are silicon NPN power transistors in a TO−3 type package designed for high voltage, high−speed power switching regulators, converters, inverters, and motor control system applications Features: D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400V Min (BUX48) VCEO(sus) = 45. |
| Features | D Collector−Emitter Sustaining Voltage: VCEO(sus) = 400V Min (BUX48) VCEO(sus) = 450V Min (BUX48A) D Collector−Emitter Saturation Voltage: VCE(sat) = 1.5V Max D Switching Time: tf = 0.8s Max Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO BUX48 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V. |
| Part Number | BUX48 |
| Manufacturer | Motorola Inc |
| Title | SWITCHMODE II Series NPN Silicon Power Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BUX48/D SWITCHMODE II Series NPN Silicon Power Transistors The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed, power switching in inductive circuits where fall time is critical. They are particularly suited for lin. |
| Features | ÎÎÎÎ ÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ . |
| Part Number | BUX48 |
| Manufacturer | STMicroelectronics |
| Title | High voltage fast-switching NPN power transistors |
| Description | bsoThe BUX48 and BUX48A are multi epitaxial mesa ONPN transistors mounted in TO-3 metal can. -They are intended for switching and industrial Obsolete Product(s)applications for single and three-phase mains. 1 2 TO-3 Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking . |
| Features |
■ NPN transistors ■ High voltage capability ■ High current capability ) ■ Fast switching speed uct(sApplications rod ■ Switching mode power supplies ■ Flyback and forward single transistor low power Pconverters leteDescription bsoThe BUX48 and BUX48A are multi epitaxial mesa ONPN transistors mounted in TO-3 metal can. -They are intended for switching and industrial Obsolete Product(s)applications. |
| Part Number | BUX48 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package ·High voltage capability ·High current capability ·Fast switching speed APPLICATIONS ·Switch mode power supplies ·Transistor low power converters PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(T. |
| Features | tion Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BUX48 IC=0.2A ; L=25mH BUX48A IE=50mA; IC=0 IC=10A; IB=2A CONDITIONS www.datasheet4u.com BUX48 BUX48A SYMBOL MIN 400 TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage V 450 7 30 V V(BR)EBO Emitter-base breakdown voltage BUX48 BUX48A BUX48 BUX48A VCEsat-1 Collector-emitter saturati. |
| Part Number | BUX48 |
| Manufacturer | Seme LAB |
| Title | Bipolar NPN Device |
| Description | BUX48 Dimensions in mm (inches). 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 0.97 (0.060) 1.10 (. |
| Features | e. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Generated 31-Jul-02 . |
| Part Number | BUX48 |
| Manufacturer | Thinki Semiconductor |
| Title | 175Watt Metal Package NPN Silicon Power Transistor |
| Description | The BUX48 is a silicon epitaxial-base mesa NPN transistor mounted in JEDEC TO-3 metal case. lt is intended for power switching circuits and industrial applications from single and threephase mains. 26.00 Max. 10.90 13.10 Max. 8.60 1.60 12 2-Φ4.0 Thru. APPLICATIONS Switch mode power supplies Flyb. |
| Features | Designed for general-purpose switching applications. Collector-Emitter saturation voltage VCE(sat) = 1.5 Vdc (Max) @ lC = 8 Adc High voltage capability, high current capability DESCRIPTION The BUX48 is a silicon epitaxial-base mesa NPN transistor mounted in JEDEC TO-3 metal case. lt is intended for power switching circuits and industrial applications from single and threephase mains. 26.00 Max. 1. |
| Part Number | BUX48 |
| Manufacturer | Inchange Semiconductor |
| Title | Power Transistor |
| Description | ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suit. |
| Features | TICS SYMBOL PARAMETER -65~200 ℃ MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor BUX48 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 V(BR)EBO E. |
| Part Number | BUX48 |
| Manufacturer | nELL |
| Title | High Power NPN Silicon Transistors |
| Description | The BUX48 is a silicon epitaxial-base mesa NPN transistor mounted in JEDEC TO-3 metal case. lt is intended for power switching circuits and industrial applications from single and threephase mains. 26.00 Max. 10.90 13.10 Max. 8.60 1.60 12 2-Φ4.0 Thru. APPLICATIONS Switch mode power supplies Flyb. |
| Features | Designed for general-purpose switching applications. Collector-Emitter saturation voltage VCE(sat) = 1.5 Vdc (Max) @ lC = 8 Adc High voltage capability, high current capability DESCRIPTION The BUX48 is a silicon epitaxial-base mesa NPN transistor mounted in JEDEC TO-3 metal case. lt is intended for power switching circuits and industrial applications from single and threephase mains. 26.00 Max. 1. |
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