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| Part Number | BUV19 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUV19 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·Low Collector Saturation Voltage- : VCE(sat)= 0.6V(Max.) @IC= 30A ·High Switching Speed APPLICATIONS ·High efficiency converters ·Motor drive control ·Switching regulator Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitt. |
| Features | ETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.2A; IB= 0; L= 25mH 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 30A; IB= 3A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 60A; IB= 6A VBE(sat) Base-Emitter Saturation Voltage ICEX Collector Cutoff Current IEBO Emitter Cutof. |
| Part Number | BUV19 |
| Manufacturer | Seme LAB |
| Title | NPN HIGH CURENT SWITCHING TRANSISTORS |
| Description | BUV18 BUV19 MECHANICAL DATA Dimensions in mm NPN HIGH CURENT SWITCHING TRANSISTORS 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) Designed for high energy applications requiring robust fast switching devices FEATURES 38.61 (1.52) 39.12 (1.5. |
| Features |
38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1.47 (0.058) 1.60 (0.063)
22.23 (0.875)
max.
1
2
3 (case)
3.84 (0.151) 4.09 (0.161)
7.92 (0.312) 12.70 (0.50)
• Fast Switching • Low VCE(SAT) • High Switching Currents • High Reliability • Military Options Available Pin 1 – Base TO –3 (TO-204AE) Pin 2 – Emitter Case – Collector APPLICATIONS • High Efficiency Co. |
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Desde 2024. D4U Semiconductor.
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