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| Part Number | BUT11F |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUT11F |
| Manufacturer | NXP |
| Title | Silicon Diffused Power Transistor |
| Description | High-voltage, high-speed glass-passivated npn power transistor in a SOT186 envelope with electrically insulated mounting base,intended for use in converters, inverters, switching regulators, motor control systems, etc. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Col. |
| Features | ent peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 850 450 5 10 2 4 20 150 150 UNIT V V A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Junction to heatsink Junction to ambient CONDITIONS with heatsink compound in free air TYP. 55 MAX. 3.95 UNIT K/W K/W ISO. |
| Part Number | BUT11F |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Silicon Transistor |
| Description | BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications NPN Silicon Transistor 1 TO-220F 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BUT11F : BUT11AF VCEO Collector-Emitter Voltage : BUT11F : . |
| Features | 1AF tON tSTG tF Turn On Time Storage Time Fall Time * Pulsed: pulsed duration = 300µs, duty cycle = 1.5% VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A IC = 3A, IB = 0.6A IC = 2.5A, IB = 0.5A VCC = 250V, IC = 2.5A IB1 = -IB2 = 0.5A RL = 100Ω Min. Typ. Max. Units 400 V 450 V 1 mA 1 mA 10 mA 1.5 V 1.5 V 1.3 V 1.3 V 1 µs 4 µs 0.8 µs Thermal Cha. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUT11 |
NXP |
Silicon diffused power transistors |
|
| 2 | BUT11 |
Power Innovations Limited |
NPN SILICON POWER TRANSISTOR |
|
| 3 | BUT11 |
TRSYS |
NPN SILICON POWER TRANSISTOR |
|
| 4 | BUT11 |
Wing Shing Computer Components |
NPN SILICON TRANSISTOR |
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| 5 | BUT11 |
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| 6 | BUT11 |
SavantIC |
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| 7 | BUT11A |
STMicroelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
|
| 8 | BUT11A |
NXP |
Silicon diffused power transistors |
|
| 9 | BUT11A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | BUT11A |
nELL |
High Voltage Fast-switching NPN Power Transistor |
|
Desde 2024. D4U Semiconductor.
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