Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BU508AF |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BU508AF |
| Manufacturer | ST Microelectronics |
| Title | High voltage NPN Power transistor |
| Description | The BU508AF is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage. Order codes Part Number BU508AF Marking BU508AF Package ISOWATT218FX Packaging Tube March 2007 Rev 1 1/8 www.st.c. |
| Features |
■ ■ ■ ■ ■ ■ ■ State-of-the-art technology: – Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tight hFE range at operating collector current High ruggedness Fully insulated power package U.L. compliant In compliance with the 2002/93/EC European directive 1 2 3 ISOWATT218FX Applications ■ ■ Internal schematic diagram . |
| Part Number | BU508AF |
| Manufacturer | CDIL |
| Title | NPN POWER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO . |
| Features | =0 Emitter Base Voltage BU508F, AF IEBO VEB=5V, IC=0 Emitter Cut-off Current BU508DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat) * IC=4.5A, IB=2.0A SWITCHING TIME Storage Time Fall Time MIN 700 5.0 TYP MAX 1.0 UNIT mA V V. |
| Part Number | BU508AF |
| Manufacturer | TRANSYS Electronics |
| Title | NPN POWER TRANSISTORS |
| Description | Collector -Emitter Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Collector Peak Current Total Power Dissipation upto Ta=25º C Tc=25º C Storage Temperature Range Max Operating Junction Temperature THERMAL RESISTANCE Thermal Resistance Junction - Case SYMBOL VCES VCEO VEBO . |
| Features | 08DF hFE IC=4.5A, VCE=5V DC Current Gain VF IF=4.0A Diode forward Voltage BU508DF VCE(sat) * IC=4.5A, IB=2.0A Collector Emitter Saturation Voltage BU508AF, DF IC=4.5A, IB=2.0A BU508F Base Emitter Saturation Voltage VBE(sat) * IC=4.5A, IB=2.0A SWITCHING TIME Storage Time Fall Time MIN 700 5.0 TYP MAX 1.0 UNIT mA V V mA 300 2.25 2.0 1.0 5.0 1.5 V V V V ts tf IC=4.5A,hFE=2.5,VCC=140V LC=0.9mH. |
| Part Number | BU508AF |
| Manufacturer | INCHANGE |
| Title | Silicon NPN Power Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL . |
| Features | unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 2.0A 1.0 V VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff Current IEBO Emitter Cutoff Current IC= 4.5A; IB= 2.0A VCE= 1500V; VBE= 0 VCE= 1500V; VBE= 0; TC=125℃ VEB= . |
| Part Number | BU508AF |
| Manufacturer | NXP |
| Title | Silicon Diffused Power Transistor |
| Description | High voltage, high-speed switching npn transistors in a fully isolated SOT199 envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat tf PARAMETER Collector-emitter voltage peak value Collector-emi. |
| Features | Tstg Tj PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 34 150 150 UNIT V V A A A A W ˚C ˚C Ths ≤ 25 ˚C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-hs . |
| Part Number | BU508AF |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PFa package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of high resolution monitors PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB IBM Ptot Tj Tstg PARAMETER Collector-ba. |
| Features | tter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=100mA ;IB=0,L=25mH IE=1mA ;IC=0 IC=4.5A; IB=1.6A IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125 VEB=6V; IC=0 IC=0.1A ; VCE=5V IC=0.1A ; VCE=5V IE=0 ; VCB=10V;f=1MHz 6 MIN 700 7.5 www.datasheet4u.com BU508AF SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICES IEBO hF. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BU508A |
INCHANGE |
NPN Transistor |
|
| 2 | BU508A |
ST Microelectronics |
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS |
|
| 3 | BU508A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 4 | BU508A |
CDIL |
NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR |
|
| 5 | BU508A |
Philips |
Silicon Diffused Power Transistor |
|
| 6 | BU508A |
Multicomp |
Horizontal Deflection Transistors |
|
| 7 | BU508A |
Thinki Semiconductor |
HIGH VOLTAGE FAST-SWITCHING SILICON NPN POWER TRANSISTOR |
|
| 8 | BU508A |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
|
| 9 | BU508A-2 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 10 | BU508A-M |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
Desde 2024. D4U Semiconductor.
|