BU323Z Datasheet. existencias, precio

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BU323Z NPN Silicon Power Darlington


BU323Z
Part Number BU323Z
Distributor Stock Price Buy
INCHANGE
BU323Z
Part Number BU323Z
Manufacturer INCHANGE
Title NPN Transistor
Description ·With TO-220 packaging ·Very high DC current gain ·Monolithic darlington transistor with integrated antiparallel collector-emitter diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·AC-DC motor control ·Electronic ignition ·Alternator regulator .
Features th j-a Thermal Resistance,Junction to Case Thermal Resistance,Junction to Ambient MAX 1.0 62.5 UNIT ℃/W ℃/W ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC=7A, IB= 0 VCE(sat)1 Collector-Emitter Saturation Voltage IC= 7A ,IB= 70mA VCE(sat)2 Collector-Emitter Saturation Voltage IC= 8A ,IB= 0.1A VCE(.
Motorola  Inc
BU323Z
Part Number BU323Z
Manufacturer Motorola Inc
Title AUTOPROTECTED DARLINGTON
Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BU323Z/D Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed f.
Features
• Integrated High
  –Voltage Active Clamp
• Tight Clamping Voltage Window (350 V to 450 V) Guaranteed Over the
  – 40°C to +125°C Temperature Range
• Clamping Energy Capability 100% Tested in a Live Ignition Circuit
• High DC Current Gain/Low Saturation Voltages Specified Over Full Temperature Range
• Design Guarantees Operation in SOA at All Times
• Offered in Plastic SOT
  –93/TO
  –218 Type or TO
  –220 Pac.

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