Busque con el número de pieza junto con el fabricante o la descripción
| Part Number | BU326A |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BU326A |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3 package ·High voltage;high speed ·Low collector saturation voltage. APPLICATIONS ·Intended for operating in CTV receiver’s chopper supplies. PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings (Tc=25 ) SYMBOL. |
| Features | U326A CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BU326 IC=0.1A; IB=0 BU326A IC=2.5 A;IB=0.5A IC=4A;IB=1.25 A IC=2.5 A;IB=0.5A IC=4A;IB=1.25 A VCE=800V;VBE=0 1 BU326A VCE=900V;VBE=0 VEB=10V; IC=0 IC=1A ; VCE=5V IC=0.2A ; VCE=10V; f=1MHz 4.0 25 MHz 10 mA mA 400 1.5 3.0 1.4 1.6 V V V V CONDITIONS MIN 375 V TYP. MAX UNIT SYMBOL VCEO(SUS) Collector-emitter sust. |
| Part Number | BU326A |
| Manufacturer | Toshiba |
| Title | Silicon NPN Transistor |
| Description | : SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH POWER SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : V CBO=900V . High Peak Current Capability : Ic(Peak) =8A • Fall Time : tf=0.5/»s (Max.) . Glass Passivated Collector-Base Junction. 33 BU326A Unit in mm 025OMAX. MAXIMUM RATINGS (. |
| Features |
. High Voltage
: V CBO=900V
. High Peak Current Capability : Ic(Peak) =8A
• Fall Time : tf=0.5/»s (Max.) . Glass Passivated Collector-Base Junction. 33 BU326A Unit in mm 025OMAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VcBO VCEO Emitter-Base Voltage Collector Current DC Peak Collector Power Dissipation (Tc=25°C) 'EBO ic ICP . |
| Part Number | BU326A |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max.) @ IC= 2.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in operating in color TV receivers chopper s. |
| Features | ctor isc Silicon NPN Power Transistor BU326A ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 400 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A 3.0 V VBE(sat)-1 Base-E. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BU326 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | BU326 |
INCHANGE |
NPN Transistor |
|
| 3 | BU326S |
INCHANGE |
NPN Transistor |
|
| 4 | BU326S |
Semelab |
Bipolar NPN Device |
|
| 5 | BU323 |
Inchange Semiconductor |
Silicon Darlington NPN Power Transistor |
|
| 6 | BU323A |
Motorola Inc |
16 AMPERE PEAK POWER TRANSISTOR |
|
| 7 | BU323A |
INCHANGE |
NPN Transistor |
|
| 8 | BU323A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 9 | BU323AP |
Motorola Inc |
DARLINGTON NPN SILICON POWER TRANSISTOR |
|
| 10 | BU323AP |
INCHANGE |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|