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| Part Number | BU2515DF |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BU2515DF |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For use in horizontal deflection circuits of PC monitors. PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM Ptot Tj Tstg PARAMETER Collector-ba. |
| Features | EBO hFE-1 hFE-2 VF Emitter-base breakdown voltage IB=600mA ;IC=0 IC=4.5A ;IB=0.9A IC=4.5A ;IB=0.9A VCE=BVCES; VBE=0 Tj=125 VEB=6V; IC=0 IC=1.0A ; VCE=5V IC=4.5A ; VCE=5V IF=4.5A 7.5 13.5 V Collector-emitter saturation voltage 5.0 V Base-emitter saturation voltage 1.0 1.0 2.0 130 V Collector cut-off current mA Emitter cut-off current mA DC current gain 13 DC current gain 5 8 10. |
| Part Number | BU2515DF |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in horizontal deflection circuits of PC monitors. ABSOLUTE MAXIMUM RATINGS(. |
| Features | nsistor BU2515DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 600mA; IC= 0 7.5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A VBE(sat) Base-Emitter Saturation Voltage ICES Collector Cutoff. |
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|---|---|---|---|---|
| 1 | BU2515DX |
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| 2 | BU2515DX |
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Silicon Diffused Power Transistor |
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| 3 | BU2515DX |
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| 4 | BU2515AF |
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| 5 | BU2515AF |
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| 6 | BU2515AF |
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| 7 | BU2515AX |
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| 8 | BU2515AX |
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| 9 | BU2510 |
Vishay |
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| 10 | BU2510-E3 |
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Desde 2024. D4U Semiconductor.
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