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BU2515DF |
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| Part Number | BU2515DF |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 800V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICA... |
| Features |
nsistor
BU2515DF
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0
800
V
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 0.9A
VBE(sat) Base-Emitter Saturation Voltage
ICES
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= 4.5A; IB= 0.9A
VCE= BVCES; VBE= 0 VCE= BVCES; VBE= 0; TC=125℃
VEB= 6V ; IC= 0
5.0
V
1.0
V
1.0 2.0
mA
130
mA
hFE-1
DC Current Gain
IC= 1A; VCE= 5V... |
| Document |
 BU2515DF Data Sheet
PDF 208.96KB |
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Desde 2024. D4U Semiconductor.
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