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| Part Number | BFP181R |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BFP181R |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon RF Transistor |
| Description | BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFP181R Maximum Ratings Parameter Marking RFs 1=E Pi. |
| Features | pecified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit 2 Jun-21-2001 BFP181R . |
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| 1 | BFP181 |
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| 2 | BFP181 |
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| 3 | BFP181T |
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| 4 | BFP181TRW |
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| 5 | BFP181TW |
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| 6 | BFP181W |
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| 7 | BFP181W |
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| 8 | BFP180 |
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| 9 | BFP180W |
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| 10 | BFP180W |
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