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BFP181R |
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| Part Number | BFP181R |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | BFP181R NPN Silicon RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz ESD: Electrostatic discharge sensiti... |
| Features |
pecified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Jun-21-2001
BFP181R
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. AC characteristics (verified by random sampling) Transition frequency IC = 10 mA, VCE = 8 V, f = 500 ... |
| Document |
 BFP181R Data Sheet
PDF 88.12KB |
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