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BF909WR |
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| Part Number | BF909WR |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected aga. |
| Features |
• Specially designed for use at 5 V supply voltage • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. APPLICATIONS • VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit t. |
| Datasheet |
 BF909WR Data Sheet
PDF 163.95KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF909 |
NXP |
N-channel dual gate MOS-FET |
|
| 2 | BF909R |
NXP |
N-channel dual gate MOS-FET |
|
| 3 | BF900 |
Inter Control |
Sicherungshalter |
|
| 4 | BF900 |
Siliconix |
n-channel dual gate MOSFET |
|
| 5 | BF901 |
NXP |
Silicon n-channel dual gate MOS-FETs |
|
| 6 | BF901R |
NXP |
Silicon n-channel dual gate MOS-FETs |
|
| 7 | BF9024SPD-M |
BYD |
P-Channel MOSFET and Schottky Diode |
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| 8 | BF9028DND-A |
BYD |
N-Channel MOSFET |
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| 9 | BF9028DND-GE |
BYD |
N-Channel MOSFET |
|
| 10 | BF9028DNT |
BYD |
N-Channel MOSFET |
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Desde 2024. D4U Semiconductor.
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