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BF909R |
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| Part Number | BF909R |
| Manufacturer | NXP (https://www.nxp.com/) |
| Description | Enhancement type field-effect transistor in a plastic microminiature SOT143 or SOT143R package. The PINNING PIN 1 2 3 4 SYMBOL DESCRIPTION s, b source d drain g2 gate 2 g1 gate 1 handbook, halfpage d handbook, halfpage d 4 3 3 4 g2 g1 1 2 Top view MAM124 s,b BF909 marking code: %M3. Fig.1 Simplified outline (SOT143) and symbol. g2 . |
| Features |
• Specially designed for use at 5 V supply voltage • High forward transfer admittance • Short channel transistor with high forward transfer admittance to input capacitance ratio • Low noise gain controlled amplifier up to 1 GHz • Superior cross-modulation performance during AGC. transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handlin. |
| Datasheet |
 BF909R Data Sheet
PDF 306.51KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BF909 |
NXP |
N-channel dual gate MOS-FET |
|
| 2 | BF909WR |
NXP |
N-channel dual-gate MOS-FET |
|
| 3 | BF900 |
Inter Control |
Sicherungshalter |
|
| 4 | BF900 |
Siliconix |
n-channel dual gate MOSFET |
|
| 5 | BF901 |
NXP |
Silicon n-channel dual gate MOS-FETs |
|
| 6 | BF901R |
NXP |
Silicon n-channel dual gate MOS-FETs |
|
| 7 | BF9024SPD-M |
BYD |
P-Channel MOSFET and Schottky Diode |
|
| 8 | BF9028DND-A |
BYD |
N-Channel MOSFET |
|
| 9 | BF9028DND-GE |
BYD |
N-Channel MOSFET |
|
| 10 | BF9028DNT |
BYD |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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