Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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BDX67C |
| Part Number | BDX67C |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·High DC Current Gain- : hFE= 1000(Min)@ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio output stages and general amplifier and switching applications ABSOLUTE MAXIM. |
| Features | is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BDX67 VCEO(SUS) Collector-Emitter Sustaining Voltage BDX67A BDX67B IC= 50mA ; L= 25mH BDX67C VCE(sat) VBE(on) ICBO ICEO Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA Base-Emitter On Voltage BDX67 Collector Cutoff Curr. |
BDX67C |
| Part Number | BDX67C |
| Manufacturer | Seme LAB |
| Title | NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
| Description | BDX67 BDX67A BDX67B BDX67C MECHANICAL DATA Dimensions in mm NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR 9.0 max. 2. 5 26.6 max. 4.2 39.5 max. B 30.1 E 20.3 max. 1 .0 NPN epitaxial base transistors in monolithic Darlington circuit for audio output stages and general amplifier and switching a. |
| Features | lab.co.uk E-mail: [email protected] 100 ï ï ï í 120 ï ï ï 140 ï î V V A A mA W °C °C K/ W 5 5 5 5 16 20 250 150 200 -65 to +200 1.17 7/99 BDX67 BDX67A BDX67B BDX67C ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise stated) Parameter ICBO ICEO IEBO hFE VBE VCEsat Cc fhfe E(BR) hfe VF Collector cut-off current Collector cut-off current Emitter cut-off current D.C. current gain (no. |
BDX67C |
| Part Number | BDX67C |
| Manufacturer | Comset Semiconductors |
| Title | NPN SILICON DARLINGTONS POWER TRANSISTOR |
| Description | BDX67 – A – B – C NPN SILICON DARLINGTON POWER TRANSISTOR The BDX67, BDX67A, BDX67 and BDX67C are mounted in TO-3 metal package. High current power darlingtons designed for power amplification and switching applications. The complementary PNP are BDX66, BDX66A, BDX66B, BDX66C. Compliance to RoHS. A. |
| Features | RISTICS Symbol Ratings BDX67 BDX67A BDX67B BDX67C Value Unit RthJ-C Thermal Resistance, Junction to Case 1.17 °C/W ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDX67 Min 60 80 100 120 - Typ - Max - Unit VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=0.1 A, L=25mH VCE=30 V VCE=40 V VCE=50 V VCE=60 V VBE=5 V BDX67A www.DataSheet.n. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX67 |
Seme LAB |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
|
| 2 | BDX67 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BDX67 |
Comset Semiconductors |
NPN SILICON DARLINGTONS POWER TRANSISTOR |
|
| 4 | BDX67 |
INCHANGE |
NPN Transistor |
|
| 5 | BDX67A |
Seme LAB |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
|
| 6 | BDX67A |
Comset Semiconductors |
NPN SILICON DARLINGTONS POWER TRANSISTOR |
|
| 7 | BDX67A |
INCHANGE |
NPN Transistor |
|
| 8 | BDX67B |
Seme LAB |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
|
| 9 | BDX67B |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | BDX67B |
Comset Semiconductors |
NPN SILICON DARLINGTONS POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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