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BDX67C |
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| Part Number | BDX67C |
| Manufacturer | SavantIC |
| Description | ·With TO-3 package ·High current capability ·DARLINGTON APPLICATIONS ·Designed for power amplification and switching application. PINNING (See Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified ... |
| Features |
erwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current CONDITIONS IC=0.1A ; IB=0;L=25mH IC=10A ;IB=0.04A VCB=70V; IE=0 TC=150 VCE=60V; IB=0 VEB=5V; IC=0 MIN 120 2 1 5 3 3 TYP. MAX UNIT V V mA mA mA
SYMBOL VCEO(SUS) VCEsat ICBO ICEO IEBO
Switching times ton toff Turn-on time Turn-off time 1.0 3.5 µs µs
IC=-10A ; IB1=-IB2=0.04A VCC=12V ;
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
www.datasheet4u.com
BDX67C
Fig.2 Outli... |
| Document |
 BDX67C Data Sheet
PDF 137.03KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDX67 |
Seme LAB |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
|
| 2 | BDX67 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BDX67 |
Comset Semiconductors |
NPN SILICON DARLINGTONS POWER TRANSISTOR |
|
| 4 | BDX67 |
INCHANGE |
NPN Transistor |
|
| 5 | BDX67A |
Seme LAB |
NPN EPITAXIAL BASE DARLINGTON POWER TRANSISTOR |
|
| 6 | BDX67A |
Comset Semiconductors |
NPN SILICON DARLINGTONS POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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