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| Part Number | BDW84 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BDW84 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector Current -IC= -15A ·High DC Current Gain-hFE= 750(Min)@ IC= -6A ·Complement to Type BDW83/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications ABSOLUTE MAXIMUM RA. |
| Features | ww.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Darlington Power Transistor BDW84/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BDW84 -45 V(BR)CEO Collector-Emitter Breakdown Voltage BDW84A BDW84B IC= -30mA ;IB=0 -60 -80 V BDW84C -100 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -6A. |
| Part Number | BDW84 |
| Manufacturer | Comset Semiconductors |
| Title | PNP SILICON POWER DARLINGTONS |
| Description | PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D PNP SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial-base PNP power monolithic Darlington transistor mounted in Jedec TO-218 plastic package. They are intended for use in power linear and switching applications. The complementary are BDW83,. |
| Features |
istance
Value
0.83 35.7
Unit
°C/W
23/10/2012
COMSET SEMICONDUCTORS
1|3
Datasheet pdf - http://www.DataSheet4U.co.kr/
PNP BDW84 – BDW84A – BDW84B BDW84C – BDW84D ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D BDW84 BDW84A BDW84B BDW84C BDW84D Min -45 -60 -80 -100 -120 - Typ - . |
| Part Number | BDW84 |
| Manufacturer | Bourns Electronic Solutions |
| Title | PNP SILICON POWER DARLINGTONS |
| Description | BDW84, BDW84A, BDW84B, BDW84C, BDW84D PNP SILICON POWER DARLINGTONS www.DataSheet4U.com ● Designed for Complementary Use with BDW83, BDW83A, BDW83B, BDW83C and BDW83D 150 W at 25°C Case Temperature 15 A Continuous Collector Current C B SOT-93 PACKAGE (TOP VIEW) 1 ● ● ● 2 Minimum hFE of 750 at. |
| Features | 2. 3. 4. VEBO IC IB Ptot Ptot ½LIC2 Tj Tstg TA VCEO V CBO SYMBOL VALUE -45 -60 -80 -100 -120 -45 -60 -80 -100 -120 -5 -15 -0.5 150 3.5 100 -65 to +150 -65 to +150 -65 to +150 V A A W W mJ °C °C °C V V UNIT These values apply when the base-emitter diode is open circuited. Derate linearly to 150°C case temperature at the rate of 1.2 W/°C. Derate linearly to 150°C free air temperature at the rate of. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BDW83 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 2 | BDW83 |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
| 3 | BDW83 |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS |
|
| 4 | BDW83 |
INCHANGE |
NPN Transistor |
|
| 5 | BDW83A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 6 | BDW83A |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
| 7 | BDW83A |
Comset Semiconductors |
NPN SILICON POWER DARLINGTONS |
|
| 8 | BDW83A |
INCHANGE |
NPN Transistor |
|
| 9 | BDW83B |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 10 | BDW83B |
Bourns |
NPN SILICON POWER DARLINGTONS |
|
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