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| Part Number | BD951 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD951 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD952 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power amplifier and switching applications ABSOLUTE MAXIMUM. |
| Features | CTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 4V ICBO Collector Cutoff Curren. |
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|---|---|---|---|---|
| 1 | BD950 |
Inchange Semiconductor |
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| 2 | BD950 |
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| 3 | BD950F |
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| 4 | BD951F |
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| 5 | BD952 |
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| 6 | BD952 |
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| 7 | BD95242MUV |
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| 8 | BD9524MUV |
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| 9 | BD9526AMUV |
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| 10 | BD9528AMUV |
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|
Desde 2024. D4U Semiconductor.
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