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BD951 |
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| Part Number | BD951 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD952 ·Minimum Lot-to-Lot variations for robust device performance and reliab... |
| Features |
CTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
VBE(on) Base-Emitter On Voltage
IC= 2A; VCE= 4V
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= 80V; IE= 0
VCB= 40V; IE= 0,TJ=150℃ VCE= 40V; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 500mA ; VCE= 4V
hFE-2
DC Current... |
| Document |
 BD951 Data Sheet
PDF 206.58KB |
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Desde 2024. D4U Semiconductor.
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