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| Part Number | BD678A |
| Distributor | Stock | Price | Buy |
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| Part Number | BD678A |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | BD676A/678A/680A/682 BD676A/678A/680A/682 Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD675A, BD677A, BD679A and BD681 respectively PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Collector-Base Vo. |
| Features | e : BD676A : BD678A : BD680A : BD682 Test Condition IC = - 50mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 200 - 200 - 200 - 200 - 500 - 500 - 500 - 500 -2 750 750 - 2.8 - 2.5 - 2.5 - 2.5 V V V V µA µA µA µA µA µA µA µA mA Typ. Max. Units ICBO VCB = - 45V, IE = 0 VCB = - 60V, IE = 0 VCB = - 80V, IE = 0 VCB = - 100V, VBE = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VB. |
| Part Number | BD678A |
| Manufacturer | Motorola Inc |
| Title | PNP Transistor |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD676/D Plastic Medium-Power Silicon PNP Darlingtons . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD. |
| Features | ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Symbol VCEO VCB VEB IC IB BD676 BD676A 45 45 BD678 B. |
| Part Number | BD678A |
| Manufacturer | ON Semiconductor |
| Title | PNP Silicon Transistor |
| Description | BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current G. |
| Features |
• High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, B. |
| Part Number | BD678A |
| Manufacturer | CDIL |
| Title | PNP DARLIGNTON POWER SILICON TRANSISTORS |
| Description | SYMBOL TEST CONDITION BD676 BD678 BD680 BD682 BD684 UNIT BD676A BD678A BD680A Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation @ Tc=25ºC Derate above 25ºC VCBO VCEO VEBO IC IB PD 45 60 80 100 120 V 45 60 80 100 12. |
| Features | . |
| Part Number | BD678A |
| Manufacturer | Comset Semiconductors |
| Title | Power Transistor |
| Description | PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD. |
| Features | ET SEMICONDUCTORS 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD676/A - BD678/A - BD680/A - BD682/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , -VCB= - 45 V IE=0 , -VCB= - 60 V IE=0 , -VCB= - 80 V IE=0 , -VCB= - 100 V IE=0 , -VCB= - 45V, Tj= 150°C IE=0 , -VCB= - 60V, Tj= 150°C IE=0 , -VCB= - 80V, Tj= 150°C IE=0 , -VCB= - 100V Tj= 1. |
| Part Number | BD678A |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60V ·DC Current Gain— : hFE = 750(Min) @ IC= -2 A ·Complement to Type BD677A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose ampli. |
| Features | TERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -40mA VBE(on) Base-Emitter On Voltage IC= -2A; VCE= -3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -60V; IB= 0 VCB= -60V; IE= 0 VCB= -60V; IE= . |
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