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| Part Number | BD678 |
| Distributor | Stock | Price | Buy |
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| Part Number | BD678 |
| Manufacturer | CDIL |
| Title | PNP DARLIGNTON POWER SILICON TRANSISTORS |
| Description | SYMBOL TEST CONDITION BD676 BD678 BD680 BD682 BD684 UNIT BD676A BD678A BD680A Collector -Base Voltage Collector -Emitter Voltage Emitter Base Voltage Collector Current Base Current Collector Power Dissipation @ Tc=25ºC Derate above 25ºC VCBO VCEO VEBO IC IB PD 45 60 80 100 120 V 45 60 80 100 12. |
| Features | . |
| Part Number | BD678 |
| Manufacturer | Central Semiconductor |
| Title | SILICON PNP TRANSISTOR |
| Description | The CENTRAL SEMICONDUCTOR BD676 series are silicon PNP Darlington power transistors designed for audio and video output applications. MARKING: FULL PART NUMBER TO-126 CASE MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL BD676 Collector-Base Voltage VCBO 45 Collector-Emitter Voltage V. |
| Features | B=5.0V BVCEO IC=50mA (BD676) 45 BVCEO IC=50mA (BD678) 60 BVCEO IC=50mA (BD680) 80 BVCEO IC=50mA (BD682) 100 BVCEO IC=50mA (BD684) 120 VCE(SAT) IC=1.5A, IB=6.0mA (BD676: IC=2.0A) VBE(ON) VCE=3.0V, IC=1.5A (BD676: IC=2.0A) hFE VCE=3.0V, IC=1.5A (BD676: IC=2.0A) 750 hfe VCE=3.0V, IC=1.5A, f=1.0MHz (BD676: IC=2.0A) 10 fhfe VCE=3.0V, IC=1.5A (BD676: IC=2.0A) 60 I(SB) VCE=50. |
| Part Number | BD678 |
| Manufacturer | STMicroelectronics |
| Title | Complementary power Darlington transistors |
| Description | The devices are manufactured in planar base island technology with monolithic Darlington configuration. . 1 2 3 SOT-32 Figure 1. Internal schematic diagram R1 typ.= 15 KΩ Table 1. Device summary Order codes BD677 BD677A BD678 BD678A BD679 BD679A BD680 BD680A BD681 BD682 Marking BD677 BD677A BD67. |
| Features |
■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Linear and switching industrial equipment Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. . 1 2 3 SOT-32 Figure 1. Internal schematic diagram R1 typ.= 15 KΩ Table 1. Device summary O. |
| Part Number | BD678 |
| Manufacturer | ON Semiconductor |
| Title | PNP Silicon Transistor |
| Description | BD676G, BD676AG, BD678G, BD678AG, BD680G, BD680AG, BD682G, BD682TG Plastic Medium-Power Silicon PNP Darlingtons This series of plastic, medium−power silicon PNP Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current G. |
| Features |
• High DC Current Gain • Monolithic Construction • BD676, 676A, 678, 678A, 680, 680A, 682 are complementary with BD675, 675A, 677, 677A, 679, 679A, 681 • BD678, 678A, 680, 680A are equivalent to MJE 700, 701, 702, 703 • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage BD676G, BD676AG BD678G, BD678AG BD680G, BD680AG BD682G, B. |
| Part Number | BD678 |
| Manufacturer | Comset Semiconductors |
| Title | Power Transistor |
| Description | PNP BD676/A - BD678/A - BD680/A - BD682/A SILICON DARLINGTON POWER TRANSISTORS The BD676/A-BD678/A-BD680/A-BD682/A are PNP transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. NPN complements are BD. |
| Features | ET SEMICONDUCTORS 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD676/A - BD678/A - BD680/A - BD682/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , -VCB= - 45 V IE=0 , -VCB= - 60 V IE=0 , -VCB= - 80 V IE=0 , -VCB= - 100 V IE=0 , -VCB= - 45V, Tj= 150°C IE=0 , -VCB= - 60V, Tj= 150°C IE=0 , -VCB= - 80V, Tj= 150°C IE=0 , -VCB= - 100V Tj= 1. |
| Part Number | BD678 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -60 ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5 A ·Complement to Type BD677 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as output devices in complementary general-purpose ampli. |
| Features | ERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA VBE(on) Base-Emitter On Voltage IC= -1.5A; VCE= -3V ICEO Collector Cutoff Current ICBO Collector Cutoff Current IEBO Emitter Cutoff Current VCE= -60V; IB= 0 VCB= -60V; IE= 0 VCB= -60V; I. |
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