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| Part Number | BD651 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD651 |
| Manufacturer | Comset Semiconductors |
| Title | SILICON DARLINGTON POWER TRANSISTORS |
| Description | SEMICONDUCTORS BD643 – 645 – 647 – 649 – 651 SILICON DARLINGTON POWER TRANSISTORS NPN epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intended for output stages in audio equipment, general amplifiers, and analogue switching application. PNP c. |
| Features | 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ Ts Storage Temperature range Limiting values in accordance with the Absolute Maximum System (IEC 134) THERMAL CHARACTERISTICS Symbol RthJ-MB RthJ-. |
| Part Number | BD651 |
| Manufacturer | Bourns Electronic Solutions |
| Title | NPN SILICON POWER DARLINGTONS |
| Description | www.DataSheet4U.com BD645, BD647, BD649, BD651 NPN SILICON POWER DARLINGTONS ● ● ● ● Designed for Complementary Use with BD646, BD648, BD650 and BD652 62.5 W at 25°C Case Temperature 8 A Continuous Collector Current Minimum hFE of 750 at 3V, 3 A B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin 2 is i. |
| Features | EBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL VCEO V CBO SYMBOL VALUE 80 100 120 140 60 80 100 120 5 8 12 0.3 62.5 2 50 -65 to +150 -65 to +150 260 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C. This rating is based on the cap. |
| Part Number | BD651 |
| Manufacturer | INCHANGE |
| Title | NPN Transistor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD652 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use as complementary AF push-pul. |
| Features | t 62.5 ℃/W BD651 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor BD651 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA VCE(sat)-2 Collector-Emitter Saturati. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD650 |
Bourns Electronic Solutions |
PNP SILICON POWER DARLINGTONS |
|
| 2 | BD650 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BD650 |
Comset Semiconductors |
Power Transistor |
|
| 4 | BD650 |
INCHANGE |
PNP Transistor |
|
| 5 | BD650CS |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|
| 6 | BD650CT |
Pan Jit International |
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS |
|
| 7 | BD650F |
INCHANGE |
PNP Transistor |
|
| 8 | BD6510F |
Rohm |
High-Side Switch |
|
| 9 | BD6512F |
Rohm |
High-Side Switch |
|
| 10 | BD6513F |
Rohm |
High-Side Switch |
|
Desde 2024. D4U Semiconductor.
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