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BD651 |
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| Part Number | BD651 |
| Manufacturer | INCHANGE |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 120V(Min) ·High DC Current Gain : hFE= 750(Min) @IC= 3A ·Low Saturation Voltage ·Complement to Type BD652 ·Minimum Lot-to-Lot variations for robust de... |
| Features |
t 62.5 ℃/W
BD651
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon NPN Darlington Power Transistor
BD651
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Breakdown Voltage IC= 30mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 12mA
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 5A; IB= 50mA
VBE(on) Base-Emitter On Voltage
IC= 3A ; VCE= 3V
ICBO
Collector Cutoff Current
VCB= 120V; IE= 0 VCB= 70V; I... |
| Document |
 BD651 Data Sheet
PDF 190.35KB |
Similar Datasheet
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Desde 2024. D4U Semiconductor.
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