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| Part Number | BD435 |
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| Part Number | BD435 |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD434, BD436, and BD4. |
| Features | . |
| Part Number | BD435 |
| Manufacturer | Comset Semiconductors |
| Title | Silicon NPN Power Transistors |
| Description | NPN BD433 – BD435 – BD437 SILICON NPN POWER TRANSISTORS. The BD433-BD435-BD437 are NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. PNP complements are BD434-BD436-BD438. Compliance to RoHS. ABSOLUTE MAXIMUM RAT. |
| Features | CTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter sustaning Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(*) Test Condition(s) IE= 0, VCB= 22 V IE= 0, VCB= 32 V IE= 0, VCB= 45 V VBE= 0, VCE= 22 V VBE= 0, VCE= 32 V VBE= 0, VCE= 45 V IC= 0 VEB= 5 V IB= 0 IC=. |
| Part Number | BD435 |
| Manufacturer | BLUE ROCKET ELECTRONICS |
| Title | Silicon NPN transistor |
| Description | TO-126F NPN 。Silicon NPN transistor in a TO-126F Plastic Package. / Features BD436 。 Complementary pair with BD436. / Applications 。 Medium power linear and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classification. |
| Features | BD436 。 Complementary pair with BD436. / Applications 。 Medium power linear and switching applications. / Equivalent Circuit / Pinning 12 3 PIN1：Emitter PIN 2：Collector PIN 3：Base / hFE Classifications & Marking 。See Marking Instructions http://www.fsbrec.com 1/6 BD435 Rev.E Mar.-2016 / Absolute Maximum Ratings(Ta=25℃) Parameter Collector to Base Voltage Collector to Emitte. |
| Part Number | BD435 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Vol. |
| Features | EO Collector Cut-off Current : BD433 : BD435 : BD437 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD433/435 : BD437 : ALL DEVICE : BD433/435 : BD437 VCE(sat) * Collector-Emitter Saturation Voltage : BD433 : BD435 : BD437 * Base-Emitter ON Voltage : BD433 : BD435 : BD437 Current Gain Bandwidth Product VCE = 5V, IC = 10mA VCE = 1V, IC = 500mA VCE = 1V, IC = 2A 40 30 85 50 40 130 130 140 VCE . |
| Part Number | BD435 |
| Manufacturer | TRANSYS Electronics |
| Title | EPITAXIAL SILICON POWER TRANSISTORS |
| Description | SYMBOL Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junctio. |
| Features | SCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 BD434 BD436 BD438 BD440 BD442 VCB=Rated VCBO, IE=0 ICBO Collector Cut off Current <100 <100 <100 <100 <100 Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage ICES IEBO *VCEO (sus) *VCE (sat) VBE=0, VCE=Rated VCES VEB=5V, IC=0 IC=100mA, IB=0 IC=2.0A, IB=0.2. |
| Part Number | BD435 |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistors |
| Description | ·Collector-Emitter Sustaining Voltage - : VCEO(SUS)= 32V(Min) ·Complement to type BD436 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER . |
| Features | IC= 30mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 2A; VCE= 1V ICBO Collector Cutoff Current VCB= 32V; IE= 0 ICEO Collector Cutoff Current VCE= 32V; VBE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE-1 DC Current Gain IC= 10mA; VCE= 5V hFE-2 DC Current Gain IC= 0.5A; VCE= 1V hFE-3 DC Current Gain IC= 2A; VCE= . |
| Part Number | BD435 |
| Manufacturer | Micro Commercial Components |
| Title | NPN Silicon Power Transistors |
| Description | MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# BD433/BD435/BD437 Features • • • • • • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) E. |
| Features |
• • • • • • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Intended for use in medium power near and switching applications With TO-126 package The complementary PNP type is BD434, BD436, BD438 NPN Silicon Power Transistors A K N Maximum Ratings Symbol VCEO Para. |
| Part Number | BD435 |
| Manufacturer | ON Semiconductor |
| Title | Plastic Medium Power Silicon NPN Transistor |
| Description | BD435, BD437, BD439, BD441 Plastic Medium Power Silicon NPN Transistor This series of plastic, medium−power silicon NPN transistors can be used for amplifier and switching applications. Complementary types are BD438 and BD442. Features http://onsemi.com • Pb−Free Package is Available* 4.0 AMPERES . |
| Features |
http://onsemi.com
• Pb−Free Package is Available* 4.0 AMPERES POWER TRANSISTORS NPN SILICON ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎ ÎÎÎÎÎ. |
| Part Number | BD435 |
| Manufacturer | Unisonic Technologies |
| Title | NPN SILICON TRANSISTOR |
| Description | The UTC BD435 is a NPN epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high DC current gain, etc. The UTC BD435 is suitable for medium power linear and switching applications. FEATURES * High DC current gain ORDERING INFORMATION Ordering Number Le. |
| Features | * High DC current gain ORDERING INFORMATION Ordering Number Lead Free Halogen Free BD435L-T60-K BD435G-T60-K BD435L-T60-K BD435G-T60-K Note: Pin assignment: G: Gate K: Cathode A: Anode Package TO-126 TO-126 Pin Assignment 123 KAG KAG Packing Bulk Bulk MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R221-026.A BD435 Preliminary NPN EPITAXI. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD430 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR |
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| 2 | BD433 |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
|
| 3 | BD433 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 4 | BD433 |
TRANSYS Electronics |
EPITAXIAL SILICON POWER TRANSISTORS |
|
| 5 | BD433 |
Comset Semiconductors |
Silicon NPN Power Transistors |
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| 6 | BD433 |
Inchange Semiconductor |
Silicon NPN Power Transistors |
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| 7 | BD433 |
Micro Commercial Components |
NPN Silicon Power Transistors |
|
| 8 | BD433 |
CDIL |
EPITAXIAL SILICON POWER TRANSISTORS |
|
| 9 | BD433M2EFJ-CE2 |
ROHM |
LDO Regulators |
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| 10 | BD433M2FP3-CE2 |
ROHM |
LDO Regulators |
|
Desde 2024. D4U Semiconductor.
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