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| Part Number | BD433 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD433 |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The BD433, BD435, and BD437 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package, intented for use in medium power linear and switching applications. The BD433 is especially suitable for use in car-radio output stages. The complementary PNP types are BD434, BD436, and BD4. |
| Features | . |
| Part Number | BD433 |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD433/435/437 BD433/435/437 Medium Power Linear and Switching Applications • Complement to BD434, BD436 and BD438 respectively 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Vol. |
| Features | EO Collector Cut-off Current : BD433 : BD435 : BD437 IEBO hFE Emitter Cut-off Current * DC Current Gain : BD433/435 : BD437 : ALL DEVICE : BD433/435 : BD437 VCE(sat) * Collector-Emitter Saturation Voltage : BD433 : BD435 : BD437 * Base-Emitter ON Voltage : BD433 : BD435 : BD437 Current Gain Bandwidth Product VCE = 5V, IC = 10mA VCE = 1V, IC = 500mA VCE = 1V, IC = 2A 40 30 85 50 40 130 130 140 VCE . |
| Part Number | BD433 |
| Manufacturer | TRANSYS Electronics |
| Title | EPITAXIAL SILICON POWER TRANSISTORS |
| Description | SYMBOL Collector Base Voltage Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Base Current Total Dissipation @ TC=25ºC Total Dissipation @ Ta=25ºC Derate above 25ºC Operating and Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Junctio. |
| Features | SCRIPTION SYMBOL BD433 BD435 BD437 BD439 BD441 BD434 BD436 BD438 BD440 BD442 VCB=Rated VCBO, IE=0 ICBO Collector Cut off Current <100 <100 <100 <100 <100 Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage Collector Emitter Saturation Voltage Base Emitter On Voltage ICES IEBO *VCEO (sus) *VCE (sat) VBE=0, VCE=Rated VCES VEB=5V, IC=0 IC=100mA, IB=0 IC=2.0A, IB=0.2. |
| Part Number | BD433 |
| Manufacturer | Comset Semiconductors |
| Title | Silicon NPN Power Transistors |
| Description | NPN BD433 – BD435 – BD437 SILICON NPN POWER TRANSISTORS. The BD433-BD435-BD437 are NPN Transistors mounted in Jedec TO-126 plastic package. They are recommended for use in medium power linear and switching applications. PNP complements are BD434-BD436-BD438. Compliance to RoHS. ABSOLUTE MAXIMUM RAT. |
| Features | CTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Collector cut-off current Collector cut-off current Emitter cut-offcurrent Collector-Emitter sustaning Voltage (*) Collector-Emitter saturation Voltage (*) Base-Emitter Voltage(*) Test Condition(s) IE= 0, VCB= 22 V IE= 0, VCB= 32 V IE= 0, VCB= 45 V VBE= 0, VCE= 22 V VBE= 0, VCE= 32 V VBE= 0, VCE= 45 V IC= 0 VEB= 5 V IB= 0 IC=. |
| Part Number | BD433 |
| Manufacturer | Micro Commercial Components |
| Title | NPN Silicon Power Transistors |
| Description | MCC Micro Commercial Components TM omponents 20736 Marilla Street Chatsworth !"# $ % !"# BD433/BD435/BD437 Features • • • • • • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) E. |
| Features |
• • • • • • Lead Free Finish/RoHS Compliant (Note1) ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Intended for use in medium power near and switching applications With TO-126 package The complementary PNP type is BD434, BD436, BD438 NPN Silicon Power Transistors A K N Maximum Ratings Symbol VCEO Para. |
| Part Number | BD433 |
| Manufacturer | CDIL |
| Title | EPITAXIAL SILICON POWER TRANSISTORS |
| Description | SYMBOL Collector Base Voltage VCBO Collector Emitter Voltage VCES Collector Emitter Voltage VCEO Emitter Base Voltage VEBO Collector Current IC Collector Peak Current (t=10ms_ ICM Base Current IB Total Dissipation @ TC=25ºC PD Total Dissipation @ Ta=25ºC Derate above 25ºC PD Opera. |
| Features | ERISTICS (Ta=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION BD433 BD435 BD437 BD439 BD441 Collector Cut off Current Collector Cut off Current Emitter Cut off Current Collector Emitter Sustaining Voltage BD434 BD436 BD438 BD440 BD442 ICBO VCB=Rated VCBO, IE=0 <100 <100 <100 <100 <100 ICES VBE=0, VCE=Rated VCES <100 <100 <100 <100 <100 IEBO VEB=5V, IC=0 <1.0 <1.0 <1.0 <1. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD430 |
Siemens Semiconductor Group |
PNP SILICON PLANAR TRANSISTOR |
|
| 2 | BD433M2EFJ-CE2 |
ROHM |
LDO Regulators |
|
| 3 | BD433M2FP3-CE2 |
ROHM |
LDO Regulators |
|
| 4 | BD433M2WEFJ-CE2 |
ROHM |
LDO Regulators |
|
| 5 | BD433M2WFP3-CE2 |
ROHM |
LDO Regulators |
|
| 6 | BD433M5FP-CE2 |
ROHM |
LDO Regulators |
|
| 7 | BD433M5FP2-CZE2 |
ROHM |
LDO Regulators |
|
| 8 | BD433M5WFP2-CZE2 |
ROHM |
LDO Regulators |
|
| 9 | BD433M5WFPJ-CZE2 |
ROHM |
LDO Regulators |
|
| 10 | BD433S2EFJ-CE2 |
ROHM |
LDO Regulators |
|
Desde 2024. D4U Semiconductor.
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