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| Part Number | BD246B |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD246B |
| Manufacturer | Power Innovations Limited |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | BD246, BD246A, BD246B, BD246C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD245 Series 80 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 10 A Continuous Collector Current. |
| Features | ature range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -10 -15 -3 80 3 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate. |
| Part Number | BD246B |
| Manufacturer | Comset Semiconductors |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATING. |
| Features | , A, B, C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICES Ratings Collector- Emitter Cut-off Current VCE VCE VCE VCE Test Condition(s) Min - Typ - Mx -0.4 Unit mA = -55 V , VBE = 0 = -70 V , VBE = 0 = -90 V , VBE = 0 = -115 V , VBE = 0 ICEO Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage (*) VCE = -30 V , IB = 0 VCE = -60 V , . |
| Part Number | BD246B |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C ·Complement to Type BD245/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for us. |
| Features | MBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD246/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD246 V(BR)CEO Collector-Emitter Breakdown Voltage BD246A BD246B BD246C VCE(sat)-1 Collector-Emitter Saturation Vo. |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD246 |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 2 | BD246 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 3 | BD246 |
Comset Semiconductors |
PNP SILICON POWER TRANSISTORS |
|
| 4 | BD246 |
INCHANGE |
PNP Transistor |
|
| 5 | BD246A |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 6 | BD246A |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 7 | BD246A |
Comset Semiconductors |
PNP SILICON POWER TRANSISTORS |
|
| 8 | BD246A |
INCHANGE |
PNP Transistor |
|
| 9 | BD246C |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 10 | BD246C |
INCHANGE |
PNP Transistor |
|
Desde 2024. D4U Semiconductor.
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