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| Part Number | BD246 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD246 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package ·Complement to type BD245/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta= ) SYMBOL PARAMETER B. |
| Features | PNP Power Transistors BD246/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD246 Collector-emitter breakdown voltage BD246A IC=30mA ;IB=0 BD246B BD246C -80 -100 IC=-3A ;IB=-0.3A IC=-10A ;IB=-2.5A IC=-3A ; VCE=-4V IC=-10A ; VCE=-4V VCE=-30V; IB=0 -0.7 BD246B/246C VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-10A ; VCE=-4V 40 20 4 -1 mA. |
| Part Number | BD246 |
| Manufacturer | Comset Semiconductors |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | BD246, A, B, C PNP SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS The BD246 series are PNP power transistors in a TO3PN envelope. They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD245, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATING. |
| Features | , A, B, C ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol ICES Ratings Collector- Emitter Cut-off Current VCE VCE VCE VCE Test Condition(s) Min - Typ - Mx -0.4 Unit mA = -55 V , VBE = 0 = -70 V , VBE = 0 = -90 V , VBE = 0 = -115 V , VBE = 0 ICEO Collector Cut-off Current Emitter Cut-off Current Collector- Emitter Breakdown Voltage (*) VCE = -30 V , IB = 0 VCE = -60 V , . |
| Part Number | BD246 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C ·Complement to Type BD245/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for us. |
| Features | MBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.56 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD246/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER BD246 V(BR)CEO Collector-Emitter Breakdown Voltage BD246A BD246B BD246C VCE(sat)-1 Collector-Emitter Saturation Vo. |
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