BD246 |
Part Number | BD246 |
Manufacturer | INCHANGE |
Description | ·Collector Current -IC= -10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = -45V(Min)- BD246; -60V(Min)- BD246A -80V(Min)- BD246B; -100V(Min)- BD246C ·Complement to Type BD245/A/B/C ·Minimum Lot-t... |
Features |
MBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.56 ℃/W
isc website:www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
BD246/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BD246
V(BR)CEO
Collector-Emitter Breakdown Voltage
BD246A BD246B
BD246C
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VBE(on)-1 Base-Emitter On Voltage
VBE(on)-2 Base-Emitter On Voltage
BD246
ICES
Collector Cutoff Current
BD246A BD246B
BD246C
ICEO
Collec... |
Document |
BD246 Data Sheet
PDF 213.85KB |
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