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| Part Number | BD245 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BD245 |
| Manufacturer | Power Innovations Limited |
| Title | NPN SILICON POWER TRANSISTORS |
| Description | BD245, BD245A, BD245B, BD245C NPN SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD246 Series 80 W at 25°C Case Temperature B SOT-93 PACKAGE (TOP VIEW) 1 q q q q 10 A Continuous Collector Current. |
| Features | ture range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 10 15 3 80 3 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.64 W/°C. |
| Part Number | BD245 |
| Manufacturer | Comset Semiconductors |
| Title | NPN SILICON POWER TRANSISTORS |
| Description | BD245 – A – B – C NPN SINGLE-DIFFUSED MESA SILICON POWER TRANSISTORS They are the power transistors for power amplifier and high-speed-switching applications. The complementary is BD246, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings BD245 BD245A BD245B BD245C BD245 BD245A BD24. |
| Features | Symbol Ratings VCE VCE VCE VCE Test Condition(s) = 55 V , VBE = 0 = 70 V , VBE = 0 = 90 V , VBE = 0 = 115 V , VBE = 0 BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C BD245 BD245A BD245B BD245C Min Typ Max Unit ICES Collector- Emitter Cut-off Current - - 0.4 mA ICEO IEBO VCEO Collector Cut-off Current VCE = 30 V , IB = 0 VCE = 60 V , IB = 0 45 60 80 100 40 20 4 20 3 - 0.7 1 . |
| Part Number | BD245 |
| Manufacturer | SavantIC |
| Title | SILICON POWER TRANSISTOR |
| Description | ·With TO-3PN package www.datasheet4u.com ·Complement to type BD246/A/B/C APPLICATIONS ·For use in medium power linear and switching applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION BD245/A/B/C Fig.1 simplified outline (TO-3PN) and symbol Absolute maximu. |
| Features | NPN Power Transistors BD245/A/B/C CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER BD245 Collector-emitter breakdown voltage BD245A IC=30mA ;IB=0 BD245B BD245C 80 100 IC=3A ;IB=0.3A IC=10A ;IB=2.5A IC=3A ; VCE=4V IC=10A ; VCE=4V VCE=30V; IB=0 0.7 BD245B/245C VCE=60V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=10A ; VCE=4V 40 20 4 1.0 mA mA 1.0 4.0 1.6 3.0. |
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