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BD245 |
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| Part Number | BD245 |
| Manufacturer | INCHANGE |
| Description | ·Collector Current -IC= 10A ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 45V(Min)- BD245; 60V(Min)- BD245A 80V(Min)- BD245B; 100V(Min)- BD245C ·Complement to Type BD246/A/B/C ·Minimum Lot-to-Lot... |
| Features |
RAMETER
Rth j-c Thermal Resistance, Junction to Case
isc website：www.iscsemi.com
MAX UNIT 1.56 ℃/W
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
BD245/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
BD245
45
V(BR)CEO
Collector-Emitter Breakdown Voltage
BD245A BD245B
IC= 30mA ;IB=0
60 80
V
BD245C
100
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
1.0
V
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 10A; IB= 2.5A
4.0
V
VBE(on)-1 VBE(on)-2
Base-Emitter On V... |
| Document |
 BD245 Data Sheet
PDF 212.00KB |
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Desde 2024. D4U Semiconductor.
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