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BD244C |
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| Part Number | BD244C |
| Manufacturer | Multicomp |
| Description | BD244C High Power Bipolar Transistor TO-220, General Purpose Features: • PNP plastic power transistors. • General purpose amplifier and switching applications. TO-220 Plastic Package Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D - 0.90 E 1.15 1.40 F 3.75 3.88 G. |
| Features |
• PNP plastic power transistors. • General purpose amplifier and switching applications. TO-220 Plastic Package Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D - 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J - 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N - 31.24 O 7° Dimensions : Millimetres Page 1 05/08/08 V1.1 BD244C High Power Bipolar Transistor Absolute Maximum Ratings Characteristic Collector-Base Voltage (Open Emitter) Collector Emitter Voltage (Open Base) Collector Curre. |
| Datasheet |
 BD244C Data Sheet
PDF 131.33KB |
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BD244C |
| Part Number | BD244C |
| Manufacturer | CDIL |
| Title | PNP PLASTIC POWER TRANSISTOR |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose . |
| Features | t TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45 60 80 100 V max. 6.0 A max. 65 W max. 150 °C max. 1.5 V min. 30 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45. |
BD244C |
| Part Number | BD244C |
| Manufacturer | STMicroelectronics |
| Title | Complementary power transistors |
| Description | The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. . 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BD243. |
| Features |
■ Complementary NPN-PNP devices Applications ■ Power linear and switching Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. . 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BD243C BD244C Mark. |
BD244C |
| Part Number | BD244C |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Complement to Type BD243C ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL. |
| Features | LECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -30mA ;IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -1A VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -4V ICES Collector Cutoff Current VCE= -100V; VBE= 0 ICEO Collector Cutoff Current VCE= -60V;IB= 0 MIN MAX UNIT -100 V -1.. |
BD244C |
| Part Number | BD244C |
| Manufacturer | RECTRON |
| Title | Power Transistors |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi. |
| Features | . |
BD244C |
| Part Number | BD244C |
| Manufacturer | SavantIC |
| Title | Silicon PNP Power Transistors |
| Description | ·With TO-220C package ·Complement to type BD243/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD244 VCBO Collector-base vol. |
| Features | mitter sustaining voltage BD244A BD244B IC=-30mA; IB=0 BD244C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=-6A;IB=-1 A Base-emitter on voltage IC=-6A ; VCE=-4V Collector cut-off current BD244/A VCE=-30V; IB=0 BD244B/C VCE=-60V; IB=0 BD244 VCE=-45V; VBE=0 Collector cut-off current BD244A BD244B VCE=-60V; VBE=0 VCE=-80V; VBE=0 BD244C VCE=-100V; VBE=0 . |
BD244C |
| Part Number | BD244C |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | BD244/A/B/C BD244/A/B/C Medium Power Linear and Switching Applications • Complement to BD243, BD243A, BD243B and BD243C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Bas. |
| Features | n IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 0.7 - 0.7 - 0.4 - 0.4 - 0.4 - 0.4 -1 30 15 - 1.5 -2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 0.3A VCE = - 4V, IC = - 3A IC = - 6A, IB = - 1A VCE = - 4V, IC = - 6A IEB. |
BD244C |
| Part Number | BD244C |
| Manufacturer | Motorola Inc |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD243B/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emit. |
| Features | ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Rating Sy. |
BD244C |
| Part Number | BD244C |
| Manufacturer | Power Innovations Limited |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD243 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Spec. |
| Features | ture range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -6 -10 -3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate o. |
BD244C |
| Part Number | BD244C |
| Manufacturer | Comset Semiconductors |
| Title | Silicon PNP Power Transistors |
| Description | BD244 – A – B – C SILICON PNP POWER TRANSISTORS The BD244 series are PNP power transistors in a TO-220 envelope. They are intended for use in medium power linear and switching applications. The complementary is BD243, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collect. |
| Features | ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test Condition(s) Min Typ Max Unit ICES Collector- Emitter Cutoff Current = -45 V , VBE = 0 = -60 V , VBE = 0 = -80 V , VBE = 0 = -100 V , VBE = 0 ICEO IEBO VCEO Collector Cut-off Current VCE = -30 V , IB = 0 VCE = -60 V , IB = 0 BD244 BD244A BD244B BD244C BD244 BD244A BD244B BD244C BD244 BD244A. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD244 |
INCHANGE |
PNP Transistor |
|
| 2 | BD244 |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 3 | BD244 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
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| 4 | BD244 |
CDIL |
PNP PLASTIC POWER TRANSISTOR |
|
| 5 | BD244 |
Comset Semiconductors |
Silicon PNP Power Transistors |
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| 6 | BD244 |
SavantIC |
Silicon PNP Power Transistors |
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| 7 | BD244A |
INCHANGE |
PNP Transistor |
|
| 8 | BD244A |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
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| 9 | BD244A |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 10 | BD244A |
CDIL |
PNP PLASTIC POWER TRANSISTOR |
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Desde 2024. D4U Semiconductor.
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