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BD244 |
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| Part Number | BD244 |
| Manufacturer | CDIL |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose Amplifier and Switching Applications H PIN CONFIGURATION . |
| Features | t TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45 60 80 100 V max. 6.0 A max. 65 W max. 150 °C max. 1.5 V min. 30 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45 60 80 100 V max. 5.0 V Continental Device India Limited Data Sheet Page 1 of 3 BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C Collector current Collector current (Peak) Base curr. |
| Datasheet |
 BD244 Data Sheet
PDF 69.99KB |
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BD244 |
| Part Number | BD244 |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD243; -60V(Min)- BD243A -80V(Min)- BD243B; -100V(Min)- BD243C ·Complement to Type BD243/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·D. |
| Features | h j-c Thermal Resistance, Junction to Case 1.92 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD244/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD244 VCEO(SUS) Collector-Emitter Sustaining Voltage BD244A BD244B IC= -30mA ;IB=0 BD244C VCE(sat) Collector-Emitter Saturation Vol. |
BD244 |
| Part Number | BD244 |
| Manufacturer | Power Innovations Limited |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD243 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Spec. |
| Features | ture range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -6 -10 -3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate o. |
BD244 |
| Part Number | BD244 |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | BD244/A/B/C BD244/A/B/C Medium Power Linear and Switching Applications • Complement to BD243, BD243A, BD243B and BD243C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Bas. |
| Features | n IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 0.7 - 0.7 - 0.4 - 0.4 - 0.4 - 0.4 -1 30 15 - 1.5 -2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 0.3A VCE = - 4V, IC = - 3A IC = - 6A, IB = - 1A VCE = - 4V, IC = - 6A IEB. |
BD244 |
| Part Number | BD244 |
| Manufacturer | Comset Semiconductors |
| Title | Silicon PNP Power Transistors |
| Description | BD244 – A – B – C SILICON PNP POWER TRANSISTORS The BD244 series are PNP power transistors in a TO-220 envelope. They are intended for use in medium power linear and switching applications. The complementary is BD243, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collect. |
| Features | ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test Condition(s) Min Typ Max Unit ICES Collector- Emitter Cutoff Current = -45 V , VBE = 0 = -60 V , VBE = 0 = -80 V , VBE = 0 = -100 V , VBE = 0 ICEO IEBO VCEO Collector Cut-off Current VCE = -30 V , IB = 0 VCE = -60 V , IB = 0 BD244 BD244A BD244B BD244C BD244 BD244A BD244B BD244C BD244 BD244A. |
BD244 |
| Part Number | BD244 |
| Manufacturer | SavantIC |
| Title | Silicon PNP Power Transistors |
| Description | ·With TO-220C package ·Complement to type BD243/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD244 VCBO Collector-base vol. |
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| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD240 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
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| 2 | BD240 |
Bourns |
PNP SILICON POWER TRANSISTORS |
|
| 3 | BD240 |
CDIL |
PNP PLASTIC POWER TRANSISTOR |
|
| 4 | BD240 |
SavantIC |
SILICON POWER TRANSISTOR |
|
| 5 | BD240 |
Comset Semiconductors |
Medium Power Linear/Switching |
|
| 6 | BD240 |
INCHANGE |
PNP Transistor |
|
| 7 | BD2400U510-1366 |
Yantel |
Ultra Low Profile 1336 Balun |
|
| 8 | BD2400U520-1365 |
Yantel |
Ultra Low Profile 1365 Balun |
|
| 9 | BD240A |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 10 | BD240A |
Bourns |
PNP SILICON POWER TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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