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BD244B |
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| Part Number | BD244B |
| Manufacturer | STMicroelectronics (https://www.st.com/) |
| Description | The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. TO-220 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP V CBO V CEO V EBO I. |
| Features | R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = 60 V V EB = 5 V I C = 30 mA for BD243B/BD244B for BD243C/BD244C IC = 6 A IC = 6 A I C = 0.3 A IC = 3 A I C = 0.5 A I C = 0.5 A IB = 1 A V CE = 4 V V CE = 4 V V CE = 4 V V CE = 10 V V CE = 10 V f = 1MHz f = 1KHz 30 15 3 20 Min. Ty. |
| Datasheet |
 BD244B Data Sheet
PDF 34.04KB |
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BD244B |
| Part Number | BD244B |
| Manufacturer | Fairchild Semiconductor |
| Title | PNP Epitaxial Silicon Transistor |
| Description | BD244/A/B/C BD244/A/B/C Medium Power Linear and Switching Applications • Complement to BD243, BD243A, BD243B and BD243C respectively 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Bas. |
| Features | n IC = - 30mA, IB = 0 Min. - 45 - 60 - 80 - 100 - 0.7 - 0.7 - 0.4 - 0.4 - 0.4 - 0.4 -1 30 15 - 1.5 -2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = - 30V, IB = 0 VCE = - 60V, IB = 0 VCE = - 45V, VBE = 0 VCE = - 60V, VBE = 0 VCE = - 80V, VBE = 0 VCE = - 100V, VBE = 0 VEB = - 5V, IC = 0 VCE = - 4V, IC = - 0.3A VCE = - 4V, IC = - 3A IC = - 6A, IB = - 1A VCE = - 4V, IC = - 6A IEB. |
BD244B |
| Part Number | BD244B |
| Manufacturer | Motorola Inc |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD243B/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emit. |
| Features | ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Rating Sy. |
BD244B |
| Part Number | BD244B |
| Manufacturer | Power Innovations Limited |
| Title | PNP SILICON POWER TRANSISTORS |
| Description | BD244, BD244A, BD244B, BD244C PNP SILICON POWER TRANSISTORS Copyright © 1997, Power Innovations Limited, UK JUNE 1973 - REVISED MARCH 1997 q Designed for Complementary Use with the BD243 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Spec. |
| Features | ture range Storage temperature range Lead temperature 3.2 mm from case for 10 seconds NOTES: 1. 2. 3. 4. V EBO IC ICM IB Ptot Ptot ½LIC 2 Tj Tstg TL VCEO VCER SYMBOL VALUE -55 -70 -90 -115 -45 -60 -80 -100 -5 -6 -10 -3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate o. |
BD244B |
| Part Number | BD244B |
| Manufacturer | SavantIC |
| Title | Silicon PNP Power Transistors |
| Description | ·With TO-220C package ·Complement to type BD243/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD244 VCBO Collector-base vol. |
| Features | mitter sustaining voltage BD244A BD244B IC=-30mA; IB=0 BD244C VCEsat VBE ICEO ICES IEBO hFE-1 hFE-2 Collector-emitter saturation voltage IC=-6A;IB=-1 A Base-emitter on voltage IC=-6A ; VCE=-4V Collector cut-off current BD244/A VCE=-30V; IB=0 BD244B/C VCE=-60V; IB=0 BD244 VCE=-45V; VBE=0 Collector cut-off current BD244A BD244B VCE=-60V; VBE=0 VCE=-80V; VBE=0 BD244C VCE=-100V; VBE=0 . |
BD244B |
| Part Number | BD244B |
| Manufacturer | INCHANGE |
| Title | PNP Transistor |
| Description | ·DC Current Gain -hFE =30(Min)@ IC= -0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = -45V(Min)- BD243; -60V(Min)- BD243A -80V(Min)- BD243B; -100V(Min)- BD243C ·Complement to Type BD243/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·D. |
| Features | h j-c Thermal Resistance, Junction to Case 1.92 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor BD244/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD244 VCEO(SUS) Collector-Emitter Sustaining Voltage BD244A BD244B IC= -30mA ;IB=0 BD244C VCE(sat) Collector-Emitter Saturation Vol. |
BD244B |
| Part Number | BD244B |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | Complementary Silicon Plastic Power Transistors BD243B, BD243C (NPN), BD244B, BD244C (PNP) These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS . |
| Features |
• High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Vdc 80 100 Collector−Base Voltage BD243B, BD244B BD243C, BD244C VCB Vdc 80 100 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipatio. |
BD244B |
| Part Number | BD244B |
| Manufacturer | CDIL |
| Title | PNP PLASTIC POWER TRANSISTOR |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose . |
| Features | t TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45 60 80 100 V max. 6.0 A max. 65 W max. 150 °C max. 1.5 V min. 30 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45. |
BD244B |
| Part Number | BD244B |
| Manufacturer | Comset Semiconductors |
| Title | Silicon PNP Power Transistors |
| Description | BD244 – A – B – C SILICON PNP POWER TRANSISTORS The BD244 series are PNP power transistors in a TO-220 envelope. They are intended for use in medium power linear and switching applications. The complementary is BD243, A, B, C Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Ratings Collect. |
| Features | ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings VCE VCE VCE VCE Test Condition(s) Min Typ Max Unit ICES Collector- Emitter Cutoff Current = -45 V , VBE = 0 = -60 V , VBE = 0 = -80 V , VBE = 0 = -100 V , VBE = 0 ICEO IEBO VCEO Collector Cut-off Current VCE = -30 V , IB = 0 VCE = -60 V , IB = 0 BD244 BD244A BD244B BD244C BD244 BD244A BD244B BD244C BD244 BD244A. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD244 |
INCHANGE |
PNP Transistor |
|
| 2 | BD244 |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 3 | BD244 |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 4 | BD244 |
CDIL |
PNP PLASTIC POWER TRANSISTOR |
|
| 5 | BD244 |
Comset Semiconductors |
Silicon PNP Power Transistors |
|
| 6 | BD244 |
SavantIC |
Silicon PNP Power Transistors |
|
| 7 | BD244A |
INCHANGE |
PNP Transistor |
|
| 8 | BD244A |
Fairchild Semiconductor |
PNP Epitaxial Silicon Transistor |
|
| 9 | BD244A |
Power Innovations Limited |
PNP SILICON POWER TRANSISTORS |
|
| 10 | BD244A |
CDIL |
PNP PLASTIC POWER TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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