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BD243C |
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| Part Number | BD243C |
| Manufacturer | Motorola Inc |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD243B/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min) — BD243B, . |
| Features |
ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ
Rating Symbol VCEO VCB VEB IC IB BD243B BD244B 80 80 BD243C BD244C 100 100 Unit Vdc Vdc Vdc Adc Adc Collector –Emitter Voltage Collector –Base Voltage Emitter –Base Voltage 5.0 6 10 Collector Current — Continuous. |
| Datasheet |
 BD243C Data Sheet
PDF 140.70KB |
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BD243C |
| Part Number | BD243C |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Epitaxial Silicon Transistor |
| Description | BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Bas. |
| Features | 45 60 80 100 0.7 0.7 0.4 0.4 0.4 0.4 1 30 15 1.5 2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA ICEO ICES VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 1A VCE = 4V, IC = 6A IEBO hFE VCE(sat) VBE(on) Emitter Cut-off Current *DC Current Gain *Collector-Emitt. |
BD243C |
| Part Number | BD243C |
| Manufacturer | STMicroelectronics |
| Title | Complementary power transistors |
| Description | The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. . 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BD243. |
| Features |
■ Complementary NPN-PNP devices Applications ■ Power linear and switching Description The device is manufactured in Planar technology with “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP type is BD244C. . 3 2 1 TO-220 Figure 1. Internal schematic diagram Table 1. Device summary Order code BD243C BD244C Mark. |
BD243C |
| Part Number | BD243C |
| Manufacturer | Bourns Electronic Solutions |
| Title | NPN SILICON POWER TRANSISTORS |
| Description | BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD244 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin. |
| Features | m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. Derate linearly to 150°C free air temperature at the rate o. |
BD243C |
| Part Number | BD243C |
| Manufacturer | RECTRON |
| Title | Power Transistors |
| Description | RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION See Below for Part # TO-220 - Power Transistors and Darlingtons TO-220 4 12 3 Pin Config 1. Base 2. Collector 3. Emitter 4. Collector Dimensions in millimeters Electrical Characteristics (Ta=25oC) Part # Polarity VCBO VCEO VEBO (V) (V) (V) Min Mi. |
| Features | . |
BD243C |
| Part Number | BD243C |
| Manufacturer | Multicomp |
| Title | High Power Bipolar Transistor |
| Description | BD243C High Power Bipolar Transistor TO-220, General Purpose Features: • NPN plastic power transistors. • General purpose amplifier and switching applications. TO-220 Plastic Package Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Dimensions Minimum Maximum A 14.42 16.51 B 9.. |
| Features |
• NPN plastic power transistors. • General purpose amplifier and switching applications. TO-220 Plastic Package Pin Configuration: 1. Base 2. Collector 3. Emitter 4. Collector Dimensions Minimum Maximum A 14.42 16.51 B 9.63 10.67 C 3.56 4.83 D - 0.90 E 1.15 1.40 F 3.75 3.88 G 2.29 2.79 H 2.54 3.43 J - 0.56 K 12.70 14.73 L 2.80 4.07 M 2.03 2.92 N - 31.24 O 7° Dimensions : Milli. |
BD243C |
| Part Number | BD243C |
| Manufacturer | CDIL |
| Title | NPN PLASTIC POWER TRANSISTOR |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose . |
| Features | t TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45 60 80 100 V max. 6.0 A max. 65 W max. 150 °C max. 1.5 V min. 30 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45. |
BD243C |
| Part Number | BD243C |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desig. |
| Features | tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 VCEO(SUS) Collector-Emitter Sustaining Voltage BD243A BD243B IC= 30mA ;IB=0 VCE(sat) VBE(on) BD243C Collector-Emitter Voltage Saturation IC= 6A;. |
BD243C |
| Part Number | BD243C |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | Complementary Silicon Plastic Power Transistors BD243B, BD243C (NPN), BD244B, BD244C (PNP) These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS . |
| Features |
• High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Vdc 80 100 Collector−Base Voltage BD243B, BD244B BD243C, BD244C VCB Vdc 80 100 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipatio. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD243 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 2 | BD243 |
CDIL |
NPN PLASTIC POWER TRANSISTOR |
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| 3 | BD243 |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTORS |
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| 4 | BD243 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 5 | BD243A |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 6 | BD243A |
CDIL |
NPN PLASTIC POWER TRANSISTOR |
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| 7 | BD243A |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTORS |
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| 8 | BD243A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 9 | BD243B |
Motorola Inc |
Complementary Silicon Plastic Power Transistors |
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| 10 | BD243B |
STMicroelectronics |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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