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BD243B |
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| Part Number | BD243B |
| Manufacturer | Fairchild Semiconductor |
| Description | BD243/A/B/C BD243/A/B/C Medium Power Linear and Switching Applications • Complement to BD244, BD244A, BD244B and BD244C respectively 1 TO-220 2.Collector 3.Emitter 1.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO Parameter Collector-Base Voltage : BD243 : BD243A : BD243B : BD243C VCEO Collector-. |
| Features |
45 60 80 100 0.7 0.7 0.4 0.4 0.4 0.4 1 30 15 1.5 2 V V Typ. Max. Units V V V V mA mA mA mA mA mA mA
ICEO ICES
VCE = 30V, IB = 0 VCE = 60V, IB = 0 VCE = 45V, VBE = 0 VCE = 60V, VBE = 0 VCE = 80V, VBE = 0 VCE = 100V, VBE = 0 VEB = 5V, IC = 0 VCE = 4V, IC = 0.3A VCE = 4V, IC = 3A IC = 6A, IB = 1A VCE = 4V, IC = 6A
IEBO hFE VCE(sat) VBE(on)
Emitter Cut-off Current *DC Current Gain *Collector-Emitter Saturation Voltage *Base-Emitter ON Voltage * Pulse Test :PW=300µs, duty Cycle<20% Pulsed ©2000 Fairchild Semiconductor International Rev. A, February 2000 BD243/A/B/C Typical Characteristics . |
| Datasheet |
 BD243B Data Sheet
PDF 38.10KB |
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BD243B |
| Part Number | BD243B |
| Manufacturer | CDIL |
| Title | NPN PLASTIC POWER TRANSISTOR |
| Description | Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-220 Plastic Package BD243, BD243A, BD243B, BD243C BD244, BD244A, BD244B, BD244C BD243, 243A, 243B, 243C NPN PLASTIC POWER TRANSISTORS BD244, 244A, 244B, 244C PNP PLASTIC POWER TRANSISTORS General Purpose . |
| Features | t TA=25°C unless otherwise specified) Limiting values Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) VCBO VCEO VEBO 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45 60 80 100 V max. 6.0 A max. 65 W max. 150 °C max. 1.5 V min. 30 243 243A 243B 243C 244 244A 244B 244C max. 45 60 80 100 V max. 45. |
BD243B |
| Part Number | BD243B |
| Manufacturer | Motorola Inc |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD243B/D Complementary Silicon Plastic Power Transistors . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emit. |
| Features | ÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Rating Sy. |
BD243B |
| Part Number | BD243B |
| Manufacturer | STMicroelectronics |
| Title | COMPLEMENTARY SILICON POWER TRANSISTORS |
| Description | The BD243B and BD243C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are inteded for use in medium power linear and switching applications. The complementary PNP types are BD244B and BD244C respectively. TO-220 1 2 3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE . |
| Features | R t hj- amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 1.92 62.5 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I CEO I EBO Parameter Collector Cut-off Current (V BE = 0) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = rated V CEO V CE = 60 V V EB = 5 V I C = 30 mA f. |
BD243B |
| Part Number | BD243B |
| Manufacturer | Inchange Semiconductor |
| Title | Silicon NPN Power Transistor |
| Description | ·DC Current Gain -hFE =30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 45V(Min)- BD243; 60V(Min)- BD243A 80V(Min)- BD243B; 100V(Min)- BD243C ·Complement to Type BD244/A/B/C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Desig. |
| Features | tion to Case isc website：www.iscsemi.com MAX UNIT 1.92 ℃/W 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD243/A/B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD243 VCEO(SUS) Collector-Emitter Sustaining Voltage BD243A BD243B IC= 30mA ;IB=0 VCE(sat) VBE(on) BD243C Collector-Emitter Voltage Saturation IC= 6A;. |
BD243B |
| Part Number | BD243B |
| Manufacturer | ON Semiconductor |
| Title | Complementary Silicon Plastic Power Transistors |
| Description | Complementary Silicon Plastic Power Transistors BD243B, BD243C (NPN), BD244B, BD244C (PNP) These devices are designed for use in general purpose amplifier and switching applications. Features • High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS . |
| Features |
• High Current Gain Bandwidth Product • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage BD243B, BD244B BD243C, BD244C VCEO Vdc 80 100 Collector−Base Voltage BD243B, BD244B BD243C, BD244C VCB Vdc 80 100 Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak Base Current Total Device Dissipatio. |
BD243B |
| Part Number | BD243B |
| Manufacturer | Bourns Electronic Solutions |
| Title | NPN SILICON POWER TRANSISTORS |
| Description | BD243, BD243A, BD243B, BD243C NPN SILICON POWER TRANSISTORS ● ● ● ● ● Designed for Complementary Use with the BD244 Series 65 W at 25°C Case Temperature 6 A Continuous Collector Current 10 A Peak Collector Current Customer-Specified Selections Available B C E TO-220 PACKAGE (TOP VIEW) 1 2 3 Pin. |
| Features | m from case for 10 seconds NOTES: 1. 2. 3. 4. VEBO IC ICM IB Ptot Ptot ½LIC2 Tj Tstg TL V CEO VCER SYMBOL VALUE 55 70 90 115 45 60 80 100 5 6 10 3 65 2 62.5 -65 to +150 -65 to +150 250 V A A A W W mJ °C °C °C V V UNIT This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%. Derate linearly to 150°C case temperature at the rate of 0.52 W/°C. Derate linearly to 150°C free air temperature at the rate o. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BD243 |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 2 | BD243 |
CDIL |
NPN PLASTIC POWER TRANSISTOR |
|
| 3 | BD243 |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTORS |
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| 4 | BD243 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 5 | BD243A |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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| 6 | BD243A |
CDIL |
NPN PLASTIC POWER TRANSISTOR |
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| 7 | BD243A |
Bourns Electronic Solutions |
NPN SILICON POWER TRANSISTORS |
|
| 8 | BD243A |
Inchange Semiconductor |
Silicon NPN Power Transistor |
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| 9 | BD243C |
STMicroelectronics |
Complementary power transistors |
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| 10 | BD243C |
Fairchild Semiconductor |
NPN Epitaxial Silicon Transistor |
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Desde 2024. D4U Semiconductor.
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