BD231 Datasheet. existencias, precio

logo
Busque con el número de pieza junto con el fabricante o la descripción

BD231 PNP power transistor


BD231
Part Number BD231
Distributor Stock Price Buy
SavantIC
BD231
Part Number BD231
Manufacturer SavantIC
Title SILICON POWER TRANSISTOR
Description ·With TO-126 package ·Complement to type BD230 ·High current (Max:-1.5A) ·Low voltage (Max: -80V) APPLICATIONS ·Drive stage in TV circuits PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IBM PD PD Tj Tstg.
Features Base-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=-1A; IB=-0.1A IC=-1A; IB=-0.1A IC=-1A ; VCE=-2V VCB=-30V; IE=0 VEB=-5V; IC=0 IC=-5mA ; VCE=-2V IC=-150mA ; VCE=-2V IC=-1A ; VCE=-2V IC=-50mA ; VCE=-5V 40 40 25 50 MIN TYP. www.datasheet4u.com BD231 SYMBOL VCE.
Philips Semiconductors
BD231
Part Number BD231
Manufacturer Philips Semiconductors
Title (BD2xx) Small-signal Transistors
Description Philips Semiconductors Small-signal Transistors LEADED DEVICES (continued) PNP GENERAL PURPOSE POWER TRANSISTORS TYPE NUMBER BD132 BD136 BD136-10 BD136-16 BD138 BD138-10 BD138-16 BD140 BD140-10 BD140-16 BD227 BD229 BD231 BD330 BD826 BD826-10 BD826-16 BD828 BD828-10 BD828-16 BD830 BD830-10 BD830-16 .
Features fT min. (MHz) 60 Selection guide NPN COMPL. BD131 PAGE 474 480 480 480 480 480 480 480 480 480 486 486 486 492 498 498 498 498 498 498 498 498 498 160 typ. BD135 160 typ. BD135-10 160 typ. BD135-16 160 typ. BD137 160 typ. BD137-10 160 typ. BD137-16 160 typ. BD139 160 typ. BD139-10 160 typ. BD139-16 50 typ. 50 typ. 50 typ. 75 typ. 75 typ. 75 typ. 75 typ. 75 typ. 75 typ. 75 typ. 75 typ. 75 typ. .
INCHANGE
BD231
Part Number BD231
Manufacturer INCHANGE
Title PNP Transistor
Description ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in driver stages in television circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD22.
Features mi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD227 BD229 IC= -50mA ; IB= 0 BD231 VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A VBE(on) Base-Emitter On Voltage ICBO Collector Cutoff Current IEBO E.

similar datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 BD230
NXP
NPN power transistor Datasheet
2 BD230
SavantIC
SILICON POWER TRANSISTOR Datasheet
3 BD230
INCHANGE
Silicon NPN Power Transistor Datasheet
4 BD2310G
ROHM
1ch 4A High Speed Low-side Gate Driver Datasheet
5 BD232
INCHANGE
NPN Transistor Datasheet
6 BD2327N50100AHF
Anaren
Ultra Low Profile 0404 Balun Datasheet
7 BD233
MCC
NPN Transistor Datasheet
8 BD233
JCET
NPN Transistor Datasheet
9 BD233
Fairchild Semiconductor
NPN Transistor Datasheet
10 BD233
Toshiba
Silicon NPN Transistor Datasheet
More datasheet from NXP
logo    Desde 2024. D4U Semiconductor.   |   Contáctenos   |   Política de Privacidad