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BD231 |
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| Part Number | BD231 |
| Manufacturer | INCHANGE |
| Description | ·DC Current Gain- : hFE= 40(Min)@ IC= -0.15A ·Complement to Type BD226/228/230 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in dri... |
| Features |
mi.com
1 isc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD227 BD229 IC= -50mA ; IB= 0 BD231
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -0.1A
VBE(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
IC= -1A; VCE= -2V
VCB= -30V; IE= 0 VCB= -30V; IE= 0,TC= 125℃
VEB= -5V; IC=0
hFE-1
DC Current Gain
IC= -1A ; VCE= -2V
hFE-2
DC Current Gain
IC= -0.15A ; VCE= -2V
hFE-3
DC... |
| Document |
 BD231 Data Sheet
PDF 206.33KB |
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