Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
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BC847S |
| Part Number | BC847S |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon AF Transistor |
| Description | NPN Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistors with good matching in one package • BC846S / U, BC847S: For orientation in reel see package information below •. |
| Features | . |
BC847S |
| Part Number | BC847S |
| Manufacturer | WILLAS |
| Title | NPN Transistor |
| Description | RoHS BC847S Multi-Chip TRANSISTOR (NPN) SOT-363 FEATURES Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1C ELECTRICAL CHARACTERISTICS (T. |
| Features | Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and storage junction temperature range OTJ,Tstg: -55℃to +150℃ CMARKING: 1C ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) ICParameter NCollector-base breakdown voltage Collector-emitter breakdown voltage OEmitter-base breakdown voltage RCollecto. |
BC847S |
| Part Number | BC847S |
| Manufacturer | Jin Yu Semiconductor |
| Title | NPN Transistor |
| Description | Multi-chip transistor (NPN) APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO Emitter-Base Voltage 6 IC. |
| Features | .5mA VCE(sat)(2) IC=100mA,IB=5mA Base-emitter voltage VBE(1) VBE(2) VCE=5V,IC=2mA VCE=5V,IC=10mA Transition frequency fT VCE=5V,IC=20mA ,f=100MHz Collector output capacitance Cob *pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%. VCB=10V,IE=0,f=1MHz Min Typ Max Unit 50 V 45 V 6V 15 nA 15 110 630 0.25 V 0.65 V 0.58 0.7 V 0.77 V 200 MHz 2 pF 1 JinYu semiconductor www.htsemi.com Date:201. |
BC847S |
| Part Number | BC847S |
| Manufacturer | Diotec |
| Title | SMD General Purpose NPN Transistors |
| Description | BC846S, BC847S BC846S, BC847S SMD General Purpose NPN Transistors SMD Universal-NPN-Transistoren IC = 100 mA hFE = 200...450 Tjmax = 150°C VCEO = 45 V, 65 V Ptot = 250 mW Version 2018-02-07 SOT-363 2±0.1 2 x 0.65 65 4 Type Code 0.9±0.1 Typical Applications Signal processing, Switching, Amp. |
| Features | Two transistors in one package General Purpose Compliant to RoHS, REACH, Conflict Minerals 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Zwei Transistoren in einem Gehäuse Universell anwendbar RoHS Pb Konform zu RoHS, REACH, Konfliktmineralien 1 2.1±0.1 1.25±0.1 ELV 123 Mechanical Data 1) Mechanische Daten 1) 2.4 Taped and r. |
BC847S |
| Part Number | BC847S |
| Manufacturer | JCET |
| Title | DUAL TRANSISTOR |
| Description | JC(T JIANGS U CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors BC847S DUAL TRANSISTOR (NPN+NPN) APPLICATION This device is designed for general purpose amplifier applications Marking :1C MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value . |
| Features | . |
BC847S |
| Part Number | BC847S |
| Manufacturer | GME |
| Title | Dual NPN Small Signal Surface Mount Transistor |
| Description | Production specification Dual NPN Small Signal Surface Mount Transistor FEATURES Epitaxial planar die construction. Ultra-small surface mount package. Pb Lead-free BC847S APPLICATIONS Dual NPN small signal surface mount transistor. ORDERING INFORMATION Type No. Marking BC847S 1C SOT. |
| Features |
Epitaxial planar die construction. Ultra-small surface mount package. Pb Lead-free BC847S APPLICATIONS Dual NPN small signal surface mount transistor. ORDERING INFORMATION Type No. Marking BC847S 1C SOT-363 Package Code SOT-363 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO Collector-Base Voltage 50 VCEO Collector-Emitter Voltage 45 VEBO E. |
BC847S |
| Part Number | BC847S |
| Manufacturer | Fairchild Semiconductor |
| Title | NPN Multi-Chip General Purpose Amplifier |
| Description | BC847S BC847S E2 B2 C1 SC70-6 Mark: 1C pin #1 C2 B1 E1 NOTE: The pinouts are symmetrical; pin 1 and pin 4 are interchangeable. Units inside the carrier can be of either orientation and will not affect the functionality of the device. NPN Multi-Chip General Purpose Amplifier This device is desig. |
| Features | be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Ambient Max BC847S 300 2.4 415 Units mW mW/°C °C/W 2001 Fairchild Semiconductor Corporation Rev.A1 BC847S NPN Multi-Chip General Purpose Amplifier (con. |
BC847S |
| Part Number | BC847S |
| Manufacturer | Kexin |
| Title | NPN Multi-Chip General Purpose Amplifier |
| Description | SMD Type Transistors NPN Multi-Chip General Purpose Amplifier KC847S(BC847S) Features High current gain Low collector-emitter saturation voltage SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.11.25 -0.1 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter . |
| Features | High current gain Low collector-emitter saturation voltage SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.11.25 -0.1 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Operating and Storag. |
BC847S |
| Part Number | BC847S |
| Manufacturer | SeCoS |
| Title | NPN Silicon Multi-Chip Transistor |
| Description | Elektronische Bauelemente RoHS Compliant Product BC847S NPN Silicon Multi-Chip Transistor SOT-363 * Features Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 50 V Operating & Storage junction Temperature OO Tj, Tstg : -55 C~ +150 C C 1 . |
| Features | Power dissipation PCM : 0.3 W (Tamp.= 25OC) Collector current ICM : 0.2 A Collector-base voltage V(BR)CBO : 50 V Operating & Storage junction Temperature OO Tj, Tstg : -55 C~ +150 C C 1 B2 E2 .055(1.40) .047(1.20) .026TYP (0.65TYP) .021REF (0.525)REF 8o 0o .096(2.45) .085(2.15) .053(1.35) .045(1.15) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .043(1.10) .035(0.90) .018(0.46) .010(0.26) .. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC847 |
LITE-ON |
NPN General Purpose Transistor |
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| 2 | BC847 |
STMicroelectronics |
SMALL SIGNAL NPN TRANSISTORS |
|
| 3 | BC847 |
Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
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| 4 | BC847 |
AUK corp |
NPN Silicon Transistor |
|
| 5 | BC847 |
GME |
NPN Transistor |
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| 6 | BC847 |
Multicomp |
NPN General Purpose Transistor |
|
| 7 | BC847 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
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| 8 | BC847 |
INCHANGE |
NPN Transistor |
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| 9 | BC847 |
UTC |
NPN SILICON TRANSISTOR |
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| 10 | BC847 |
Pan Jit International |
NPN GENERAL PURPOSE TRANSISTORS |
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Desde 2024. D4U Semiconductor.
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