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BC847S |
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| Part Number | BC847S |
| Manufacturer | WILLAS |
| Description | RoHS BC847S Multi-Chip TRANSISTOR (NPN) SOT-363 FEATURES Power dissipation DPCM : 300 mW (Tamb=25℃) TCollector current .,LICM : 200 mA Collector-base voltage V(BR)CBO : 50 V Operating and st... |
| Features |
Power dissipation
DPCM : 300 mW (Tamb=25℃)
TCollector current
.,LICM : 200 mA
Collector-base voltage
V(BR)CBO : 50
V
Operating and storage junction temperature range
OTJ,Tstg: -55℃to +150℃ CMARKING: 1C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TDC current gain CCollector-emitter saturation voltage LEBase-emitter voltage ETransition frequency WEJCollector output capacitance
Symbol Test conditions
V(BR)CBO Ic=10µA,IE=0 V(BR... |
| Document |
 BC847S Data Sheet
PDF 241.42KB |
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