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| Distributor | Stock | Price | Buy |
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BC817-25 |
| Part Number | BC817-25 |
| Manufacturer | Micro Commercial Components |
| Title | NPN Small Signal Transistor |
| Description | Features • Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) BC817-16 THRU BC817-40 NPN Small Signal Transistor 300mW Maximum Ratings • . |
| Features |
• Halogen Free. “Green” Device (Note 1) • Moisture Sensitivity Level 1 • Epoxy Meets UL 94 V-0 Flammability Rating • Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) BC817-16 THRU BC817-40 NPN Small Signal Transistor 300mW Maximum Ratings • Operating Junction Temperature Range: -55℃ to +150℃ • Storage Temperature Range: -55℃ to +150℃ • Thermal Resi. |
BC817-25 |
| Part Number | BC817-25 |
| Manufacturer | Infineon Technologies AG |
| Title | NPN Silicon AF Transistors |
| Description | BC817, BC818 NPN Silicon AF Transistors 3 For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807, BC808 (PNP) 2 1 VPS05161 Type BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 Maximum Ratings Paramet. |
| Features | 817, BC818 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 25 V, IE = 0 Collector cutoff current VCB = 25 V, IE = 0 , TA = 150 °C Emitter cuto. |
BC817-25 |
| Part Number | BC817-25 |
| Manufacturer | NXP |
| Title | 500mA NPN general-purpose transistors |
| Description | NPN general-purpose transistors. Table 1. Product overview Type number Package NXP BC817 SOT23 BC817W SOT323 BC337[1] SOT54 (TO-92) JEITA SC-70 SC-43A [1] Also available in SOT54A and SOT54 variant packages (see Section 2). PNP complement BC807 BC807W BC327 1.2 Features High current . |
| Features | High current Low voltage 1.3 Applications General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC ICM hFE Quick reference data Parameter Conditions collector-emitter voltage collector current (DC) open base; IC = 10 mA peak collector current DC current gain BC817; BC817W; BC337 IC = 100 mA; VCE = 1 V BC817-16; BC817-16W; BC337-16 BC817-25; BC. |
BC817-25 |
| Part Number | BC817-25 |
| Manufacturer | Taiwan Semiconductor |
| Title | NPN Small Signal Transistor |
| Description | Green compound 2 Version:J1702 CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Typical Pulsed Current Gain VS. Collector Current 10 IC , Collector Current (A) 1 0.1 0.01 0.001 0 VCE = 5 V 100 200 300 400 500 hFE IC , Collector Current (mA) BC817-16/-25/-40 Taiwan Semi. |
| Features |
● Low power loss, high efficiency ● Ideal for automated placement ● High surge current capability ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Switching mode power supply (SMPS) ● Adapters ● Lighting application ● On-board DC/DC converter MECHANICAL DATA ● Case: SOT-23 ● Molding compound meets UL 94 V-0 flam. |
BC817-25 |
| Part Number | BC817-25 |
| Manufacturer | STMicroelectronics |
| Title | SMALL SIGNAL NPN TRANSISTORS |
| Description | BC817-25 ® BC817-40 SMALL SIGNAL NPN TRANSISTORS PRELIMINARY DATA Type BC817-25 BC817-40 Marking 6B 6C s SILICON EPITAXIAL PLANAR NPN TRANSISTORS s MINIATURE SOT-23 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS s TAPE AND REEL PACKING s THE PNP COMPLEMENTARY TYPES ARE t(s)BC807-25 AND BC817. |
| Features | vice mounted on a PCB area of 1 cm2 Max 500 oC/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE = 0) VCB = 20 V VCB = 20 V TC = 150oC 100 nA 5 µA IEBO Emitter Cut-off Current VEB = 5 V (IE = 0) 100 nA V(BR)CEO∗ Collector-Emitter Breakdown Voltage IC = 10 mA 45 V (IB = 0. |
BC817-25 |
| Part Number | BC817-25 |
| Manufacturer | Central Semiconductor |
| Title | SILICON NPN TRANSISTORS |
| Description | The CENTRAL SEMICONDUCTOR BC817 and BC818 series devices are silicon NPN transistors, epoxy molded in a surface mount package, designed for general purpose switching and amplifier applications. MARKING CODE: SEE MARKING CODE TABLE ON FOLLOWING PAGE SOT-23 CASE MAXIMUM RATINGS: (TA=25°C) Collector. |
| Features | (BC817) 45 BVCEO IC=10mA (BC818) 25 BVEBO IE=1.0μA 5.0 VCE(SAT) IC=500mA, IB=50mA VBE(ON) VCE=1.0V, IC=500mA fT VCE=5.0V, IC=10mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz 10 MAX 100 5.0 100 0.7 1.2 UNITS nA μA nA V V V V V V V MHz pF BC817 BC817-16 BC817-25 BC817-40 BC818 BC818-16 BC818-25 BC818-40 MIN MAX MIN MAX MIN MAX MIN MAX hFE VCE=1.0V, IC=100mA 100 600 100 250. |
BC817-25 |
| Part Number | BC817-25 |
| Manufacturer | SeCoS |
| Title | NPN Plastic Encapsulate Transistors |
| Description | Elektronische Bauelemente BC817 -16, -25, -40 500 mA, 50 V NPN Plastic Encapsulate Transistors RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementa. |
| Features | For general AF applications High collector current High current gain Low collector-emitter saturation voltage Complementary types: BC807 (PNP) Collector 3 1 Base 2 Emitter K F SOT-23 A L 3 Top View 1 E 2 CB 1 D GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.. |
BC817-25 |
| Part Number | BC817-25 |
| Manufacturer | Diodes Incorporated |
| Title | 45V NPN SMALL SIGNAL TRANSISTOR |
| Description | Features Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction Complementary PNP Types Available (BC807) For switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to. |
| Features |
Ideally Suited for Automatic Insertion Epitaxial Planar Die Construction Complementary PNP Types Available (BC807) For switching and AF Amplifier Applications Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Automotive-Compliant Parts Are Available Under Separate Datasheet . |
BC817-25 |
| Part Number | BC817-25 |
| Manufacturer | TAITRON |
| Title | SMD General Purpose Transistor |
| Description | Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above 25 ˚C 55. |
| Features |
• NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Marking Information BC817-16 BC17-25 BC817-40 Marking Code 6A 6B 6C SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Value Unit Condit. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC817-25 |
Diotec |
SMD General Purpose NPN Transistors |
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| 2 | BC817-25 |
BLUE ROCKET ELECTRONICS |
Silicon NPN transistor |
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| 3 | BC817-25 |
Kingtronics |
NPN Silicon Epitaxial Planar Transistors |
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| 4 | BC817-25 |
UTC |
NPN GENERAL PURPOSE AMPLIFIER |
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| 5 | BC817-25 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
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| 6 | BC817-25 |
GME |
NPN General Purpose Amplifier |
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| 7 | BC817-25 |
Multicomp |
NPN General Purpose Amplifier |
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| 8 | BC817-25 |
nexperia |
500mA NPN general-purpose transistors |
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| 9 | BC817-25-G |
Comchip |
General Purpose Transistors |
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| 10 | BC817-25-HF |
Comchip |
General Purpose Transistors |
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Desde 2024. D4U Semiconductor.
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