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| Distributor | Stock | Price | Buy |
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BAS4 |
| Part Number | BAS4 |
| Manufacturer | Motorola Inc |
| Title | CASE 318-08/ STYLE 8 SOT-23 TO-236AB |
| Description | MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BAS40LT1/D Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface moun. |
| Features |
V) Forward Voltage (IF = 0.1 mAdc) Forward Voltage (IF = 30 mAdc) Forward Voltage (IF = 100 mAdc) Symbol V(BR)R CT IR VF VF VF Min 40 — — — — — Max — 5.0 1.0 380 500 1.0 Unit Volts pF µAdc mVdc mVdc Vdc
Preferred devices are Motorola recommended choices for future use and best overall value.
Thermal Clad is a registered trademark of the Bergquist Company.
REV 1
Motorola Small –Signal Transisto. |
BAS4 |
| Part Number | BAS4 |
| Manufacturer | General Semiconductor |
| Title | Schottky Diodes |
| Description | BAS40 THRU BAS40-06 Schottky Diodes SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 FEATURES ♦ These diodes feature very low turn-on Top View .056 (1.43) .052 (1.33) voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic d. |
| Features | ♦ These diodes feature very low turn-on Top View .056 (1.43) .052 (1.33) voltage and fast switching. ♦ These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) MECHANICAL DATA Case: SOT-23 Pla. |
BAS4 |
| Part Number | BAS4 |
| Manufacturer | NXP |
| Title | Low-leakage diode |
| Description | Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak . |
| Features |
• Continuous reverse voltage: max. 125 V • Repetitive peak forward current: max. 625 mA • Low reverse current: max. 1 nA • Switching time: typ. 1.5 µs. APPLICATION • Low leakage current applications. handbook, 4 columns BAS45AL DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package. k a MAM061 Fig.1 Simplified outline (SOD80C) and sym. |
BAS4 |
| Part Number | BAS4 |
| Manufacturer | Microsemi Corporation |
| Title | SCHOTTKY array SERIES |
| Description | Various configurations of Schottky barrier's diodes in SOT-23 packages are provided for general-purpose use in high-speed switching, mixers and detector applications. They may also be used for signal terminations at the board level. This helps maintain signal integrity and counteract the transmissio. |
| Features |
• • • • • • • • • • Protects from line to VCC and line to ground Clamps within one forward diode threshold voltage Low forward voltage and reverse recovery characteristics Bidirectional-low-forward available with “-04” suffix (Figure 2) SOT-23 Surface Mount packaging for small foot print PACKAGING • • • Tape & Reel EIA Standard 481 7 inch reel 3,000 pieces 13 inch reel 10,000 pieces MAXIMUM RATI. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAS100ATB6 |
Pan Jit International |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES |
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| 2 | BAS101 |
NXP |
High Voltage Switching Diodes |
|
| 3 | BAS101S |
NXP |
High Voltage Switching Diodes |
|
| 4 | BAS11 |
NXP |
Controlled avalanche rectifiers |
|
| 5 | BAS116 |
nexperia |
Low-leakage diode |
|
| 6 | BAS116 |
Diodes Incorporated |
SURFACE MOUNT LOW LEAKAGE DIODE |
|
| 7 | BAS116 |
Infineon |
Silicon Low Leakage Diode |
|
| 8 | BAS116 |
Kexin |
Low-leakage diode |
|
| 9 | BAS116 |
LITE-ON |
SURFACE MOUNT FAST SWITCHING DIODE |
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| 10 | BAS116 |
WON-TOP |
SURFACE MOUNT FAST SWITCHING DIODE |
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Desde 2024. D4U Semiconductor.
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