BAS4 |
Part Number | BAS4 |
Manufacturer | NXP (https://www.nxp.com/) |
Description | Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with ... |
Features |
• Continuous reverse voltage: max. 125 V • Repetitive peak forward current: max. 625 mA • Low reverse current: max. 1 nA • Switching time: typ. 1.5 µs. APPLICATION • Low leakage current applications. handbook, 4 columns BAS45AL DESCRIPTION Epitaxial medium-speed switching diode with a low leakage current in a small SOD80C glass SMD package. k a MAM061 Fig.1 Simplified outline (SOD80C) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR IF IFRM IFSM PARAMETER repetitive peak reverse voltage continuous reverse voltage continuous forwa... |
Document |
BAS4 Data Sheet
PDF 49.43KB |
No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | BAS100ATB6 |
Pan Jit International |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES | |
2 | BAS101 |
NXP |
High Voltage Switching Diodes | |
3 | BAS101S |
NXP |
High Voltage Switching Diodes | |
4 | BAS11 |
NXP |
Controlled avalanche rectifiers | |
5 | BAS116 |
nexperia |
Low-leakage diode | |
6 | BAS116 |
Diodes Incorporated |
SURFACE MOUNT LOW LEAKAGE DIODE |