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| Part Number | BAS170W |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BAS170W |
| Manufacturer | Siemens Semiconductor Group |
| Title | Silicon Schottky Diode |
| Description | BAS 170W Silicon Schottky Diode l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamping l High-level detecting and mixing l Small package SOD-323 ESD: Electrostastic discharge sensitive device, observe handling precautions! Type BAS 170W Marking 7 Ordering Code. |
| Features | Symbol min. Value typ. max. Unit DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 50 V V(BR) 70 375 705 880 1.5 34 2 - V mV 300 600 750 410 750 1000 µA 0.1 10 pF 2 ps 100 Ω nH - VF IR VR = 70 V Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BAS170 |
Siemens Semiconductor Group |
Silicon Schottky Diode |
|
| 2 | BAS170 |
Infineon Technologies AG |
Silicon Schottky Diode |
|
| 3 | BAS170WS |
Vishay Siliconix |
Small Signal Schottky Diode |
|
| 4 | BAS170WS-G |
Vishay |
Small Signal Schottky Diode |
|
| 5 | BAS17 |
NXP |
Low-voltage stabistor |
|
| 6 | BAS100ATB6 |
Pan Jit International |
SURFACE MOUNT DUAL ISOLATED OPPOSING SILICON SCHOTTKY DIODES |
|
| 7 | BAS101 |
NXP |
High Voltage Switching Diodes |
|
| 8 | BAS101S |
NXP |
High Voltage Switching Diodes |
|
| 9 | BAS11 |
NXP |
Controlled avalanche rectifiers |
|
| 10 | BAS116 |
nexperia |
Low-leakage diode |
|
Desde 2024. D4U Semiconductor.
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