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BAS170W |
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| Part Number | BAS170W |
| Manufacturer | Siemens Semiconductor Group |
| Description | BAS 170W Silicon Schottky Diode l General-purpose diodes for high-speed switching l Circuit protection l Voltage clamping l High-level detecting and mixing l Small package SOD-323 ESD: Electrostasti... |
| Features |
Symbol min.
Value typ. max.
Unit
DC Characteristics Breakdown voltage I(BR) = 10 µA Forward voltage IF = 1 mA IF = 10 mA IF = 15 mA Reverse current VR = 50 V
V(BR)
70 375 705 880 1.5 34 2 -
V mV 300 600 750 410 750 1000 µA 0.1 10 pF 2 ps 100 Ω nH -
VF
IR
VR = 70 V
Diode capacitance VR = 0 V, f = 1 MHz Charge carrier life time IF = 25 mA Differential forward resistance IF = 10 mA, f = 10 kHz Series inductance
CT I RF LS
Semiconductor Group
2
Edition A01, 11.07.94
BAS 170W
Forward current IF = f (VF) Reverse current IR = f (VR)
Diode capacitance CT = f (VR)
Differential forward ... |
| Document |
 BAS170W Data Sheet
PDF 96.05KB |
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