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AOTF11S65 |
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| Part Number | AOTF11S65 |
| Manufacturer | Alpha & Omega Semiconductors |
| Description | The AOT11S65 & AOB11S65 & AOTF11S65 have been TM fabricated using the advanced αMOS high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply. |
| Features |
S65 650 ±30 11 * 8 * 45 2 60 120 AOTF11S65L Units V V VGS TC=25° C TC=100° C ID IDM IAR EAR EAS PD dv/dt TJ, TSTG TL Symbol RθJA AOT11S65/AOB11S65 65 0.5 0.63 198 1.6 11 8 11 * 8 * A A mJ mJ 31 0.25 W W/ oC V/ns ° C ° C AOTF11S65L 65 -4 Units ° C/W ° C/W ° C/W Single pulsed avalanche energy G TC=25° C Power Dissipation B Derate above 25oC MOSFET dv/dt ruggedness Peak diode recovery dv/dt H Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D 39 0.31 100 20 -55 to. |
| Datasheet |
 AOTF11S65 Data Sheet
PDF 321.94KB |
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AOTF11S65 |
| Part Number | AOTF11S65 |
| Manufacturer | Freescale |
| Title | Power Transistor |
| Description | The AOT11S65 & AOB11S65 & AOTF11S65 have been fabricated using the advanced αMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalanche capability these parts can be. |
| Features | VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 750V 45A 0.399Ω 13.2nC 2.9µJ D G S C unless otherwise noted Absolute Maximum Ratings TA=25° Symbol AOT11S65/AOB11S65 Parameter VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C Repetitive avalanche energy C Single pulsed avalanche energy G C TC=25° Power Dissipation B Derate above 25oC M. |
AOTF11S65 |
| Part Number | AOTF11S65 |
| Manufacturer | INCHANGE |
| Title | N-Channel MOSFET |
| Description | ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 11 A IDM Drain Current-Single Pluse 4. |
| Features |
·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.399Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VD. |
AOTF11S65 |
| Part Number | AOTF11S65 |
| Manufacturer | Alpha & Omega Semiconductors |
| Title | 650V 11A Power Transistor |
| Description | Product Summary The AOT11S65L & AOB11S65L & AOTF11S65L & AOTF11S65 have been fabricated using the advanced aMOSTM high voltage process that is designed to deliver high levels of performance and robustness in switching applications. By providing low RDS(on), Qg and EOSS along with guaranteed avalan. |
| Features | urrent C IAR 2 Repetitive avalanche energy C EAR 60 Single pulsed avalanche energy G EAS 120 TC=25°C Power Dissipation B Derate above 25oC PD 198 39 1.6 0.31 MOSFET dv/dt ruggedness Peak diode recovery dv/dt H dv/dt 100 20 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds J TL 300 Thermal C. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AOTF11S60 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | AOTF11S60 |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 3 | AOTF11S60L |
Alpha & Omega Semiconductors |
Power Transistor |
|
| 4 | AOTF11S65L |
Alpha & Omega Semiconductors |
650V 11A Power Transistor |
|
| 5 | AOTF11C60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
| 6 | AOTF11N60 |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
| 7 | AOTF11N60 |
INCHANGE |
N-Channel MOSFET |
|
| 8 | AOTF11N60L |
Alpha & Omega Semiconductors |
11A N-Channel MOSFET |
|
| 9 | AOTF11N62 |
Alpha & Omega Semiconductors |
N-Channel MOSFET |
|
| 10 | AOTF11N62 |
INCHANGE |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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